Processing method for wafer having chamfered portion along the outer circumference thereof followed by thinning and separating

Patent metadata

Field	Value
Publication number	US-9437439-B2
Application number	US-201213666365-A
Country	US
Kind code	B2
Filing date	Nov 1, 2012
Priority date	Nov 8, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A wafer processing method for reducing the thickness of a wafer to a predetermined thickness, the wafer having a chamfered portion along the outer circumference thereof. The wafer processing method includes a stacked wafer forming step of attaching a support substrate to the front side of the wafer to thereby form a stacked wafer, and a chamfered portion removing step of positioning a cutting blade having a rotation axis parallel to the stacking direction of the stacked wafer formed by the stacked wafer forming step so that the outer circumference of the cutting blade faces the chamfered portion of the wafer, and then making the cutting blade cut into the wafer from the outer circumference toward the center thereof to thereby partially remove the chamfered portion in the range corresponding to the predetermined thickness from the front side of the wafer.

First claim

What is claimed is:

1. A device wafer processing method for reducing the thickness of a device wafer to a predetermined thickness, said device wafer having a chamfered portion along the outer circumference thereof, said wafer processing method comprising:
a stacked wafer forming step of attaching a support substrate to a front side of said device wafer to thereby form a stacked wafer followed by;
a chamfered portion removing step of positioning a single cutting blade that is thinner in width than the device wafer, the single cutting blade having a rotation axis parallel to the stacking direction of said stacked wafer formed by said stacked wafer forming step so that the outer circumference of said single cutting blade faces said chamfered portion of said device wafer, and then making said single cutting blade cut into said device wafer without cutting into or damaging the support substrate from the outer circumference toward the center thereof to thereby remove said chamfered portion to at least said predetermined thickness from the front side of said device wafer; followed by
thickness reducing step of grinding a back side of said device wafer constituting said stacked wafer after performing said chamfered portion removing step to thereby reduce the thickness of said device wafer to said predetermined thickness; followed by
a separation step of removing said support substrate from said device wafer.

2. The device wafer processing method according to claim 1 , further comprising a holding step of holding said stacked wafer on a chuck table of a cutting apparatus in a condition where said support substrate of said stacked wafer comes into contact with said chuck table before performing said chamfered portion removing step;
said chamfered portion removing step including the steps of:
positioning said cutting blade so that the rotation axis of said cutting blade becomes parallel to the rotation axis of said chuck table and the outer circumference of said cutting blade faces said chamfered portion of said device wafer;
making said cutting blade cut into said device wafer from the outer circumference toward the center thereof; and
rotating said chuck table at least 360° during said chamfered portion removing step.

Assignees

• Disco Corp

Inventors

• Priewasser Karl

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10W46/201

  located on the periphery of wafers, e.g. orientation notches or lot numbers · CPC title