High-throughput ion implanter

Patent metadata

Field	Value
Publication number	US-9437392-B2
Application number	US-201213662110-A
Country	US
Kind code	B2
Filing date	Oct 26, 2012
Priority date	Nov 2, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.

First claim

What is claimed is:

1. An ion implanter comprising:
an ion source;
a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
the scan robot configured to transport said carrier through an ion beam directed from said ion source; and
a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot, wherein said mask has dimensions large enough to cover said plurality of workpieces.

2. The ion implanter of claim 1 , wherein said ion source comprises an RF ion source.

3. The ion implanter of claim 1 , wherein said mask is magnetically fastened to said carrier.

4. The ion implanter of claim 1 , wherein said mask is mechanically fastened to said carrier.

5. The ion implanter of claim 1 , wherein said scan robot has a horizontal load position and a vertical implant position that are perpendicular to one another, and said scan robot is configured to rotate said carrier from said horizontal load position to said vertical implant position so said plurality of workpieces are in a path of said ion beam.

6. The ion implanter of claim 1 , wherein said plurality of workpieces are directly downstream of said extraction electrodes.

7. The ion implanter of claim 1 , wherein an ion beam is projected in a straight line from said ion source toward said plurality of workpieces.

8. An ion implanter comprising:
an ion source;
a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
the scan robot configured to transport said carrier holding said plurality of workpieces through an ion beam directed from said ion source;
a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot;
a transfer chamber connected to said process chamber;
a load lock connected to said transfer chamber;
a transfer robot in said transfer chamber configured to load said plurality of workpieces on said carrier and to transport said plurality of workpieces between said load lock and said process chamber; and
a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock, wherein said mask has dimensions large enough to cover said plurality of workpieces.

9. The ion implanter of claim 8 , wherein said ion source comprises an RF ion source.

10. The ion implanter of claim 8 , wherein said mask is magnetically fastened to said carrier.

11. The ion implanter of claim 8 , wherein said mask is mechanically fastened to said carrier.

12. The ion implanter of claim 8 , wherein said scan robot has a horizontal load position and a vertical implant position that are perpendicular to one another, and wherein said scan robot is configured to rotate said carrier from said horizontal load position to said vertical implant position so said plurality of workpieces are in a path of said ion beam.

13. The ion implanter of claim 8 , further comprising a second load lock connected to said transfer chamber.

14. An ion implanter comprising:
a first ion source;
a second ion source, wherein one of said ion source and said second ion source generates n-type ions and another of said ion source and said second ion source generates p-type ions;
a first process chamber connected to said ion first source and separated from said first ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces;
a first mask loader in said first process chamber, wherein said first mask loader is configured to connect a mask to said carrier;
a transfer chamber connected to said first process chamber;
a load lock connected to said transfer chamber;
a transfer robot in said transfer chamber configured to transport said plurality of workpieces between said load lock and said first process chamber;
a second process chamber connected to said transfer chamber and said second ion source, wherein said second process chamber is separated from said second ion source by a second plurality of extraction electrodes;
a second mask loader in said second process chamber, wherein said second mask loader is configured to connect a second mask to said carrier; and
a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock.

15. The ion implanter of claim 14 , further comprising a second transfer chamber connected to said process chamber and said second process chamber.

16. The ion implanter of claim 8 , wherein said plurality of workpieces are directly downstream of said extraction electrodes.

17. The ion implanter of claim 8 , wherein an ion beam is projected in a straight line from said ion source toward said plurality of workpieces.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Weaver William T
• Carlson Charles T
• Olson Joseph C
• Buonodono James
• Sullivan Paul

Classifications

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P30/22

  using masks · CPC title

• H01J2237/024

  Moving components not otherwise provided for · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01J2237/31711

  using mask · CPC title