Mesa structure diode with approximately plane contact surface
US-2015380459-A1 · Dec 31, 2015 · US
Light detection device
US8969990B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969990-B2 |
| Application number | US-201214352398-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 2, 2012 |
| Priority date | Oct 21, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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- Abstract
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Abstract
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A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.
First claim
Opening claim text (preview).
The invention claimed is: 1. A light detection device comprising: a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other; and a mounting substrate arranged as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate and a fourth principal surface opposed to the third principal surface, wher…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969990B2 cover?
- A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurali…
- Who is the assignee on this patent?
- Nagano Terumasa, HOSOKAWA Noburo, Suzuki Tomofumi, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10F77/933. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).