Photo active layer by silicon quantum dot and the fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9425336-B2
Application number	US-201214005656-A
Country	US
Kind code	B2
Filing date	Mar 22, 2012
Priority date	Mar 22, 2011
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.

First claim

The invention claimed is:

1. A photo active layer comprising a silicon quantum dot layer and a conductive polycrystalline silicon layer, alternately stacked, the silicon quantum dot layer formed with a plurality of actively doped silicon quantum dots containing first conductive type impurities in a medium of silicon compound, and the conductive polycrystalline silicon layer doped by the first conductive type impurities which are the same conductive type impurities as those of the silicon quantum dots,
wherein the silicon quantum dot layer is positioned on each of an uppermost portion and a lowermost portion of the photo active layer.

2. The photo active layer of claim 1 , wherein the silicon quantum dot layer has a thickness of 70 nm or less.

3. The photo active layer of claim 1 , wherein the conductive polycrystalline silicon layer has a thickness of 5 nm to 10 nm.

4. The photo active layer of claim 1 , wherein the medium is a silicon nitride, a silicon oxide, or a mixture thereof.

5. A solar cell comprising:
the photo active layer of claim 1 ;
a silicon substrate disposed on the lowermost portion of the photo active layer and containing a different type of doping elements from the first conductive type impurities contained in the photo active layer; and
an upper electrode formed on the uppermost portion of the photo active layer and a lower electrode formed on a lower portion of the silicon substrate.

6. A light emitting diode (LED) comprising:
the photo active layer of claim 1 ;
a silicon layer disposed on the lowermost portion of the photo active layer and containing a different type of doping elements from the first conductive type impurities contained in the photo active layer; and
an upper electrode formed on the uppermost portion of the photo active layer and a lower electrode formed on a lower portion of the silicon layer containing the different type of doping elements.

Assignees

• Kim Kyoung Joong
• Hong Seung Hui
• Park Jae Hee
• Jang Jong Shik
• Korea Res Inst Standards & Sci

Inventors

• Kim Kyoung Joong
• Hong Seung Hui
• Park Jae Hee
• Jang Jong Shik

Classifications

• H10H20/826

  comprising only Group IV materials · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/014

  having light-emitting regions comprising only Group IV materials · CPC title

• H10F77/1642

  including only Group IV materials · CPC title