Light detection device

Patent metadata

Field	Value
Publication number	US-9425224-B2
Application number	US-201514605120-A
Country	US
Kind code	B2
Filing date	Jan 26, 2015
Priority date	Oct 21, 2011
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

First claim

The invention claimed is:

1. A light detection device comprising:
a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other; and
a mounting substrate disposed as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate and a fourth principal surface opposed to the third principal surface,
wherein the semiconductor light detection element has a photodiode array, the photodiode array including a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and disposed on the first principal surface side of the semiconductor substrate, and signal lines to which the quenching resistors are connected in parallel and which are disposed on the first principal surface side of the semiconductor substrate,
wherein the mounting substrate is provided with a first electrode disposed on the third principal surface side,
wherein the semiconductor substrate is provided with a through-hole electrode electrically connected to the signal lines and penetrating from the first principal surface side to the second principal surface side, and
wherein the through-hole electrode and the first electrode are electrically connected through a bump electrode, the quenching resistors are electrically connected to the first electrode through the signal lines, the through-hole electrode, and the bump electrode.

2. The light detection device according to claim 1 ,
wherein a scintillator is optically connected to the first principal surface of the semiconductor substrate.

3. The light detection device according to claim 1 , further comprising:
a glass substrate disposed on the first principal surface side of the semiconductor substrate and having a fifth principal surface opposed to the first principal surface of the semiconductor substrate and a sixth principal surface opposed to the fifth principal surface,
wherein a side surface of the semiconductor substrate and a side surface of the glass substrate are flush with each other.

4. The light detection device according to claim 3 ,
wherein the sixth principal surface of the glass substrate is flat.

5. The light detection device according to claim 1 ,
wherein the through-hole electrode is located in a central region of the photodiode array.

6. The light detection device according to claim 1 ,
wherein the semiconductor light detection element has a plurality of said photodiode arrays, and
the through-hole electrode is located in a region between the photodiode arrays.

7. The light detection device according to claim 1 ,
wherein the semiconductor light detection element further includes a second electrode disposed on the first principal surface side of the semiconductor substrate and connecting the signal lines and the through-hole electrode.

8. The light detection device according to claim 1 , further comprising:
a signal processing unit electrically connected to the first electrode and configured to process output signals from the photodiode array, the signal processing unit disposed on the mounting substrate.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Nagano Terumasa
• HOSOKAWA Noburo
• Suzuki Tomofumi
• Baba Takashi

Classifications

• H10W72/012

  of bump connectors, dummy bumps or thermal bumps · CPC title

• H10W20/216

  characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title