Handle substrate, composite substrate for semiconductor, and semiconductor circuit board and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9425083-B2
Application number	US-201514853011-A
Country	US
Kind code	B2
Filing date	Sep 14, 2015
Priority date	Dec 25, 2013
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

First claim

The invention claimed is:

1. A handle substrate of a composite substrate for a semiconductor, said handle substrate comprising a translucent polycrystalline alumina:
wherein a purity of alumina of said translucent polycrystalline alumina is 99.9% or higher;
wherein an average of a total forward light transmittance of said translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and
wherein an average of a linear light transmittance of said translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

2. A composite substrate for a semiconductor, said composite substrate comprising:
said handle substrate of claim 1 ; and
a donor substrate bonded to a bonding surface of said handle substrate.

3. The composite substrate of claim 2 , wherein said donor substrate comprises monocrystalline silicon.

4. A semiconductor circuit board, comprising:
said composite substrate for a semiconductor of claim 2 ; and
a circuit provided on said donor substrate.

5. A method of manufacturing a semiconductor circuit board, said semiconductor circuit board comprising a handle substrate, a donor substrate bonded to a bonding surface of said handle substrate and a circuit provided on said donor substrate, the method comprising the steps of:
preparing a component, said component comprising a base substrate comprising a translucent polycrystalline alumina and having a bonding surface and an opposed surface, a donor substrate bonded to a bonding surface of said base substrate, and a circuit provided on said donor substrate, wherein a purity of alumina of said translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of said translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of said translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm;
forming said handle substrate by processing said base substrate from a side of said opposed surface to thereby decrease a thickness of said base substrate; and
irradiating ultraviolet rays in a wavelength range of 200 to 400 nm to a ultraviolet curable resin from a side of said handle substrate, thereby curing said ultraviolet curable resin, while said ultraviolet curable resin is placed to intervene between said donor substrate and a supporting body.

6. The method of claim 5 , further comprising the step of:
removing said supporting body from said semiconductor circuit board, after curing said ultraviolet curable resin.

7. The method of claim 5 , wherein said donor substrate comprises monocrystalline silicon.

Assignees

• Ngk Insulators Ltd

Inventors

• Miyazawa Sugio
• Iwasaki Yasunori
• Takagaki Tatsuro
• Ide Akiyoshi
• Nakanishi Hirokazu

Classifications

• H10P72/7438

  with parts of the auxiliary support remaining in the finished device · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title