Semiconductor apparatus with transportable edge ring for substrate transport

Patent metadata

Field	Value
Publication number	US-9425077-B2
Application number	US-201313859114-A
Country	US
Kind code	B2
Filing date	Apr 9, 2013
Priority date	Mar 15, 2013
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

First claim

What is claimed is:

1. An apparatus for processing semiconductor substrates, said apparatus comprising:
a rotatable disc capable of receiving a semiconductor substrate thereon and having a terraced outer edge having an upper edge portion with a smaller upper outer diameter than a lower outer diameter of a lower edge portion, wherein said substrate contacts said disc while said disc is rotating;
a susceptor adapted to receive said rotatable disc thereon or therein; and
an edge ring extending circumferentially around a periphery of said rotatable disc and configured to rest on a top surface of said lower edge portion, said edge ring including a horizontal surface capable of receiving a peripheral edge of said substrate thereon and a vertical portion disposed peripherally outside said horizontal surface.

2. The apparatus as in claim 1 , wherein said edge ring has an L-shaped cross section and said rotatable disc has a solid upper surface.

3. The apparatus as in claim 1 , wherein said rotatable disc includes said terraced outer edge further including a bottom edge portion with a bottom outer diameter greater than said lower outer diameter.

4. The apparatus as in claim 3 , further comprising a substrate lifting robot blade including a pair of lifting arms, said pair of lifting arms spaced apart by substantially said lower outer diameter and capable of lifting said edge ring with said semiconductor substrate thereon.

5. The apparatus as in claim 1 , wherein an inner diameter of said vertical portion of said edge ring is substantially equal to a diameter of said substrate.

6. The apparatus as in claim 1 , wherein said substrate includes a diameter greater than a diameter of a top surface of said rotatable disc.

7. The apparatus as in claim 1 , wherein said horizontal surface of said edge ring is substantially co-planar with an upper surface of said rotatable disc when said edge ring is disposed on said top surface of said lower edge portion.

8. The apparatus as in claim 1 , wherein said vertical portion of said edge ring extends above an upper surface of said rotatable disc.

9. A method for processing a semiconductor substrate using the apparatus of claim 1 , said method comprising:
providing a disc/edge ring assembly including said rotatable disc and said edge ring disposed over said lower edge portion of said rotatable disc;
disposing a substrate on said disc/edge ring assembly such that said substrate rests on at least an upper surface of said disc, said substrate including a diameter greater than said upper outer diameter; and
lifting said substrate from said disc/edge ring assembly by inserting robot blades beneath said edge ring and lifting said edge ring with peripheral edges of said substrate resting on a horizontal surface of said edge ring.

10. The method as in claim 9 , wherein said providing a disc/edge ring assembly comprises providing said a disc/edge ring assembly in a recess portion of a MOCVD (metal organic chemical vapor deposition) apparatus.

11. The method as in claim 10 , further comprising rotating said disc while depositing a film on said substrate.

12. The method as in claim 9 , further comprising rotating said disc while depositing a film on said substrate.

13. The method as in claim 12 , further comprising delivering processing gases to an underside of said rotatable disc during said rotating and depositing.

14. The method as in claim 9 , further comprising said robot blades transporting said edge ring with said peripheral edges of said substrate resting on said horizontal surface, to a load station.

15. The apparatus as in claim 1 , wherein said edge ring is a closed ring.

16. An apparatus for processing semiconductor substrates, said apparatus comprising:
a rotatable disc having an upper surface capable of receiving a semiconductor substrate thereon and having a terraced outer edge including an upper edge portion, an intermediate edge portion and a lower edge portion, said intermediate edge portion having an intermediate outer diameter greater than an upper outer diameter of said upper edge portion and less than a lower outer diameter of said lower edge portion, wherein said substrate contacts said disc while said disc is rotating;
an edge ring adapted and sized to be disposed on a top surface of said intermediate edge portion, said edge ring including a horizontal surface substantially coplanar with a top surface of said rotatable disc and a vertical portion circumferentially outside said horizontal surface, wherein said upper surface and said horizontal surface of said edge ring are shaped and sized to receive a substrate thereon, and said upper surface has an outer diameter smaller than said substrate; and
a wafer blade assembly including at least a pair of substrate lifting blades, said substrate lifting blades spaced apart by a distance substantially equal to said intermediate outer diameter.

17. The apparatus as in claim 16 , further comprising:
a processing chamber with a susceptor adapted to receive said rotatable disc and said edge ring therein;
a gas inlet port in said susceptor and capable of delivering inlet gas to an underside of said rotatable disc; and
a gas outlet port disposed under said rotatable disc and a vacuum system capable of exhausting gas from said susceptor through said gas outlet port.

18. The apparatus as in claim 16 , wherein said edge ring has a substantially L-shaped cross section and said substrate has a diameter substantially equal to an inner diameter of said vertical portion.

19. The apparatus as in claim 16 , wherein said outer diameter of said upper surface is smaller than an inner diameter of said vertical portion of said edge ring.

20. The apparatus as in claim 16 , wherein said edge ring is a closed ring.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Chih-Chang
• Lin Yung-Kai
• Liu Hsu-Shui
• Lo Kai
• Chen Chih-Ping
• Chan Chian-Kun
• Hsu Chung-Chieh
• Chang Chih-Kuo
• Hsiao Wei-Ting

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P72/7602 Primary

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title