Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9419142-B2
Application number	US-201213431073-A
Country	US
Kind code	B2
Filing date	Mar 27, 2012
Priority date	Mar 3, 2006
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first flexible substrate;
an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate;
an insulating layer over and in direct contact with the organic compound layer;
an electrophoresis element over and in direct contact with the insulating layer; and
a second flexible substrate over and in direct contact with the electrophoresis element,
wherein the inorganic compound particles comprise one of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and barium fluoride magnesium,
wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride, and
wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule.

2. The semiconductor device according to claim 1 ,
wherein the first conductive layer is electrically connected to the microcapsule, and
wherein the microcapsule is electrically connected to the second conductive layer.

3. The semiconductor device according to claim 1 , wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder.

4. The semiconductor device according to claim 1 , wherein the microcapsule includes a black particle and a white particle.

5. A semiconductor device comprising:
a first flexible substrate;
an organic compound layer in which particles having light shielding properties are dispersed over and in contact with the first flexible substrate;
an insulating layer over and in direct contact with the organic compound layer;
an electrophoresis element over and in direct contact with the insulating layer; and
a second flexible substrate over and in direct contact with the electrophoresis element,
wherein the particles having light shielding properties absorb light in the wavelength range from 280 to 780 nm,
wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride, and
wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule.

6. The semiconductor device according to claim 5 ,
wherein the first conductive layer is electrically connected to the microcapsule, and
wherein the microcapsule is electrically connected to the second conductive layer.

7. The semiconductor device according to claim 5 , wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder.

8. The semiconductor device according to claim 5 , wherein the microcapsule includes a black particle and a white particle.

9. A semiconductor device comprising:
a first flexible substrate;
an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate;
an insulating layer over and in direct contact with the organic compound layer;
a switching element over and in direct contact with the insulating layer;
an electrophoresis element over the switching element; and
a second flexible substrate over and in direct contact with the electrophoresis element,
wherein the inorganic compound particles comprise one of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and barium fluoride magnesium,
wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride,
wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule, and
wherein the first conductive layer is electrically connected to the switching element.

10. The semiconductor device according to claim 9 ,
wherein the first conductive layer is electrically connected to the microcapsule, and
wherein the microcapsule is electrically connected to the second conductive layer.

11. The semiconductor device according to claim 9 , wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder.

12. The semiconductor device according to claim 9 , wherein the microcapsule includes a black particle and a white particle.

13. A semiconductor device comprising:
a first flexible substrate;
an organic compound layer in which particles having light shielding properties are dispersed over and in contact with the first flexible substrate;
an insulating layer over and in direct contact with the organic compound layer;
a switching element over and in direct contact with the insulating layer;
an electrophoresis element over the switching element; and
a second flexible substrate over and in direct contact with the electrophoresis element,
wherein the particles having light shielding properties absorb light in the wavelength range from 280 to 780 nm,
wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride,
wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule, and
wherein the first conductive layer is electrically connected to the switching element.

14. The semiconductor device according to claim 13 ,
wherein the first conductive layer is electrically connected to the microcapsule, and
wherein the microcapsule is electrically connected to the second conductive layer.

15. The semiconductor device according to claim 13 , wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder.

16. The semiconductor device according to claim 13 , wherein the microcapsule includes a black particle and a white particle.

Assignees

• Morisue Masafumi
• Jinbo Yasuhiro
• Fujii Gen
• Kimura Hajime
• Semiconductor Energy Lab

Inventors

• Morisue Masafumi
• Jinbo Yasuhiro
• Fujii Gen
• Kimura Hajime

Classifications

• H10K10/40

  Organic transistors · CPC title

• H10D86/411

  characterised by materials, geometry or structure of the substrates · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/40

  characterised by multiple TFTs · CPC title

• H10D30/6758

  characterised by the insulating substrates · CPC title