Devices, components and methods combining trench field plates with immobile electrostatic charge

Patent metadata

Field	Value
Publication number	US-9419084-B2
Application number	US-201514840744-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Jan 12, 2010
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate).

First claim

What is claimed is:

1. A semiconductor device, comprising:
an n-type source, a p-type body region, and an insulated gate electrode which is capacitively coupled to invert portions of said body region and thereby inject electrons into a semiconductor p-type drift region;
a trench, abutting said drift region, which contains at least one conductive field plate, and which also contains immobile net electrostatic charge in a concentration sufficient to invert portions of said p-type…

Assignees

• Maxpower Semiconductor Inc

Inventors

• Darwish Mohamed N
• Zeng Jun

Classifications

• H10D64/516

  Electricity · mapped topic

• H10D64/256

  Electricity · mapped topic

• H10D62/157

  Electricity · mapped topic

• H10D62/151

  Electricity · mapped topic

• H10D62/126

  Electricity · mapped topic