Method of manufracturing structure of dielectric grid for a semiconductor device

Patent metadata

Field	Value
Publication number	US-9419048-B2
Application number	US-201514981787-A
Country	US
Kind code	B2
Filing date	Dec 28, 2015
Priority date	Nov 25, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

First claim

What is claimed is:

1. A method comprising:
providing a substrate having a pixel region and a non-pixel region adjacent to the pixel region, the substrate having sensor elements in the pixel region and having no sensor elements in the non-pixel region;
forming metal pillars over the pixel region and a metal shield layer over the non-pixel region, wherein the metal pillars are disposed above spaces between adjacent sensor elements;
depositing a dielectric layer over the metal pillars and the metal shield layer; and
etching the dielectric layer, thereby forming first trenches over the pixel region, and forming second trenches over the non-pixel region, wherein each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

2. The method of claim 1 , wherein the forming of the metal pillars and the metal shield layer includes:
depositing a metal layer over the substrate; and
etching the metal layer through a mask to form the metal pillars and the metal shield layer.

3. The method of claim 1 , further comprising, before the forming of the metal pillars and metal shield layer:
depositing an anti-reflection coating (ARC) layer over the substrate; and
depositing a buffer layer over the ARC layer, wherein the metal pillars and the metal shield layer are formed on the buffer layer.

4. The method of claim 1 , further comprising:
forming color filters and microlens over the substrate and in the first and second trenches.

5. The method of claim 1 , wherein a width of the second trenches is from 50% of a width of the first trenches to 200% of the width of the first trenches.

6. The method of claim 1 , wherein a width of the second trenches is about the same as a width of the first trenches.

7. The method of claim 1 , wherein a depth of the second trenches is at least 50% of a depth of the first trenches.

8. The method of claim 1 , wherein there are at least three second trenches over the non-pixel region.

9. The method of claim 1 , wherein each of the second trenches exposes the metal shield layer.

10. The method of claim 1 , wherein each of the second trenches is surrounded by the dielectric layer at its bottom and sidewall surfaces.

11. The method of claim 1 , wherein the metal pillars include a metal from the group consisting of tungsten (W), aluminum (Al), and copper (Cu).

12. A method comprising:
providing a substrate, the substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region;
depositing an anti-reflection coating (ARC) layer over the substrate;
depositing a buffer layer over the ARC layer;
forming metal pillars and a metal shield layer over the buffer layer, wherein spaces between adjacent metal pillars are directly above respective sensor elements, and wherein the metal shield layer is formed over the non-pixel region;
depositing a dielectric layer over the metal pillars and the metal shield layer; and
etching the dielectric layer, thereby forming first trenches over the pixel region, and forming second trenches over the non-pixel region, wherein each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces, and wherein each of the second trenches exposes the metal shield layer.

13. The method of claim 12 , further comprising:
forming color filters in the first trenches.

14. The method of claim 13 , wherein the forming of the color filters in the first trenches also forms color filters in the second trenches.

15. The method of claim 12 , wherein the metal pillars and the metal shield layer include tungsten (W), aluminum (Al), or copper (Cu).

16. A method comprising:
providing a substrate, the substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region;
forming metal pillars and a metal shield layer over the substrate, wherein spaces between adjacent metal pillars allow radiations to reach the respective sensor elements, and wherein the metal shield layer is formed over the non-pixel region;
depositing a dielectric layer over the metal pillars and the metal shield layer; and
etching the dielectric layer, thereby forming first trenches over the pixel region, and forming second trenches over the non-pixel region, wherein each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

17. The method of claim 16 , wherein a depth of the second trenches is at least 50% of a depth of the first trenches.

18. The method of claim 16 , wherein a width of the second trenches is from 50% of a width of the first trenches to 200% of the width of the first trenches.

19. The method of claim 16 , further comprising:
forming color filters in the first and second trenches.

20. The method of claim 16 , wherein each of the second trenches is surrounded by the dielectric layer at its bottom and sidewall surfaces.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chou Chun-Hao
• Huang Yin-Chieh
• Lee Kuo-Cheng
• Jeng Chi-Cherng
• Chen Hsin-Chi

Classifications

• H10F39/8063

  Microlenses · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/805

  Coatings · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title