Method and apparatus for model based flexible MRC

Patent metadata

Field	Value
Publication number	US-9418194-B2
Application number	US-201414456462-A
Country	US
Kind code	B2
Filing date	Aug 11, 2014
Priority date	Oct 20, 2011
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

First claim

What is claimed is:

1. A method of processing an exposure pattern layout for a lithographic process, the method comprising:
identifying a first feature from a plurality of features of the layout based, at least in part, on the first feature violating a pattern layout requirement;
reconfiguring, by a computer system, a second feature from the plurality of features by performing operations including evaluating a first cost function of a lithographic metric affected by a change to the second feature, until a termination condition is satisfied; and
in response to determining that the first feature still violates the pattern layout requirement after the termination condition is satisfied, relaxing the pattern layout requirement by performing operations including evaluating a second cost function of a lithographic metric affected by a parameter characteristic of relaxation of the pattern layout requirement,
wherein the first feature no longer violates the pattern layout requirement after the second feature is reconfigured or the pattern layout requirement is relaxed.

2. The method of claim 1 , wherein the change comprises:
movement of a segment of a boundary of the second feature;
a change of shape of the second feature;
a change of location of the second feature; or a combination thereof.

3. The method of claim 1 , wherein the second cost function comprises a weighted sum of squares of the lithographic metric and the parameter.

4. The method of claim 3 , wherein the lithographic metric is one of: resist image intensity, aerial image intensity, edge placement error, resist image difference, aerial image difference and edge placement error difference.

5. The method of claim 1 , wherein the termination condition includes one or more conditions selected from the group consisting of: minimization of the first cost function; maximization of the first cost function; reaching a preset number of iterations; reaching a value of the first cost function equal to or beyond a preset threshold value; reaching a predefined computation time; and reaching a value of the first cost function within an acceptable error limit.

6. The method of claim 5 , wherein the first cost function is minimized or maximized by a method selected from a group consisting of: the Gauss-Newton algorithm, the interpolation method, the Levenberg-Marquardt algorithm, the gradient descent algorithm, simulated annealing, interior point method, the genetic algorithm, solving polynomials of the changes to the feature and solving a quadratic programming problem.

7. The method of claim 1 , further comprising determining based on a criterion whether the first feature and/or the second feature is to be reconfigured.

8. The method of claim 1 , wherein the parameter constrains an amount of relaxation of the pattern layout requirement.

9. The method of claim 8 , further comprising outputting a location of the first feature and/or the second feature or an amount of relaxation of the pattern layout requirement.

10. The method of claim 1 , wherein the second feature is reconfigured and the reconfiguring is performed under a constraint dictating a range of the parameter characteristic of relaxation of the pattern layout requirement.

11. The method of claim 1 , wherein the reconfiguring is performed under constraints dictating a range of a change to the second feature.

12. The method of claim 1 , wherein the pattern layout requirement is one or more of the following or a combination thereof: a minimal space rule, a minimal width rule, a minimal space corner-to-corner rule, and a minimal corner-to-edge space rule.

13. A computer program product comprising a non-transitory computer readable medium having instructions stored thereon, which when executed by a computer system, perform a process of processing an exposure pattern layout for a lithographic process, the process comprising:
identifying a first feature from a plurality of features of the layout, the first feature violating a pattern layout requirement;
reconfiguring a second feature from the plurality of features by performing operations including evaluating a first cost function of a lithographic metric affected by a change to the second feature, until a termination condition is satisfied; and
in response to determining that the first feature still violates the pattern layout requirement after the termination condition is satisfied, relaxing the pattern layout requirement by performing operations including evaluating a second cost function of a lithographic metric affected by a parameter characteristic of relaxation of the pattern layout requirement;
wherein the first feature no longer violates the pattern layout requirement after the second feature is reconfigured or the pattern layout requirement is relaxed.

14. The medium of claim 13 , wherein the change comprises one or more of:
movement of a segment of a boundary of the second feature; a change of shape of the second feature; and a change of location of the second feature.

15. The medium of claim 13 , wherein the second cost function comprises a weighted sum of squares of the lithographic metric and the parameter.

16. The medium of claim 13 , wherein the termination condition includes one or more conditions selected from the group consisting of: minimization of the first cost function; maximization of the first cost function; reaching a preset number of iterations; reaching a value of the first cost function equal to or beyond a preset threshold value; reaching a predefined computation time; and reaching a value of the first cost function within an acceptable error limit.

Assignees

• Asml Netherlands Bv

Inventors

• Liu Taihui
• Chen Been-Der
• Lu Yen-Wen

Classifications

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G06F30/00

  Computer-aided design [CAD] · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G06F17/50

  Physics · mapped topic

• G06F17/5081 Primary

  Physics · mapped topic