Lithographic apparatus, device manufacturing method, and method of correcting a mask

Patent metadata

Field	Value
Publication number	US-9417519-B2
Application number	US-201213438491-A
Country	US
Kind code	B2
Filing date	Apr 3, 2012
Priority date	Apr 7, 2011
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A lithographic apparatus includes a mask correction system configured to controllably and locally alter a property of a mask, for example transmissivity, transmissivity to a particular polarization state, birefringence and/or geometry. The mask correction system, in an embodiment, directs a beam of radiation onto a spot of the mask, the mask being scanned relative to the mask correction system. The mask correction system may include an arrangement to irradiate multiple

First claim

The invention claimed is:

1. A lithographic apparatus, comprising:
a mask support configured to support a mask bearing a pattern and to position the mask in a first radiation beam so as to impart the pattern to the first radiation beam;
a projection system configured to project the first radiation beam patterned by the mask onto a substrate; and
a mask correction system configured to controllably and locally deform material constituting part of, or alter a materials property within, the integral physical structure of the mask for use of the mask having the locally deformed material or altered property in patterning of the first radiation beam, wherein the mask correction system comprises a focusing optical system configured to direct a second radiation beam to the mask so that the property of the mask is locally altered by the second radiation beam.

2. The lithographic apparatus of claim 1 , wherein the mask correction system is configured to locally alter one or more properties of the mask selected from the group consisting of: transmissivity to the radiation beam; transmissivity to a polarization state of the radiation beam; birefringence; and geometry.

3. The lithographic apparatus of claim 1 , wherein the mask correction system is configured to direct second radiation onto a plurality of spots on the mask substantially simultaneously.

4. The lithographic apparatus of claim 3 , wherein the mask support comprises a positioner configured to scan the mask relative to the mask correction system in a first direction.

5. The lithographic apparatus of claim 4 , wherein the positioner is further configured to scan the mask in the first direction when the mask is positioned in the radiation beam.

6. The lithographic apparatus of claim 3 , wherein the plurality of spots are arranged in a two-dimensional array, at least either rows or columns of the two-dimensional array of spots forming an acute angle to the first direction.

7. The lithographic apparatus of claim 3 , wherein the focusing optical system comprises:
a beam divider to divide the second radiation beam into a plurality of sub-beams to be incident on the mask at respective spaced apart spots; and
a beam director to selectively direct each of the sub-beams to respective spots on the mask.

8. The lithographic apparatus of claim 7 , wherein the beam divider comprises a microlens array and the beam director comprises an array of movable mirrors, each microlens of the microlens array being arranged to focus a sub-beam on a respective one of the movable mirrors.

9. The lithographic apparatus of claim 8 , wherein each movable mirror is movable between a first position at which a respective one of the sub-beams is directed to be incident on a respective spot on the mask and a second position at which the respective one of the sub-beams is directed to not be incident on the mask.

10. The lithographic apparatus of claim 8 , wherein each movable mirror is movable between a plurality of positions at each of which a respective one of the sub-beams is directed to be incident on a respective spot on the mask.

11. The lithographic apparatus of claim 1 , wherein the focusing optical system comprises a radiation source configured to provide the second radiation beam.

12. The lithographic apparatus of claim 1 , wherein the mask correction device further comprises a controllable polarizer arranged to selectively impart a desired polarization state to the second radiation beam.

13. The lithographic apparatus of claim 12 , wherein the controllable polarizer comprises a polarizer and a switching device arranged to selectively move the polarizer into and out of the second radiation beam.

14. The lithographic apparatus of claim 1 , further comprising a mask inspection device and wherein the mask correction device is configured to change the mask when the mask is in a position to be inspected by the mask inspection device.

15. A method of correcting a mask for use in a lithographic device manufacturing method, the method comprising:
in a lithographic apparatus, directing a first radiation beam to be incident selectively on a spot on the mask to locally deform material constituting part of, or alter a materials property within, the integral physical structure of the mask for use of the mask having the locally deformed material or altered property in patterning of a second radiation beam.

16. The method of claim 15 , wherein the property of the mask that is locally altered by the first radiation beam is one or more selected from the group consisting of: transmissivity to the second radiation beam used in the lithographic device manufacturing method; transmissivity to a polarization state of the second radiation beam; birefringence; and geometry.

17. The method of claim 15 , wherein directing comprises directing the first radiation beam onto a plurality of spots on the mask substantially simultaneously.

18. The method of claim 17 , further comprising scanning the mask relative to the first radiation beam in a first direction while performing the directing.

19. A device manufacturing method using a lithographic apparatus, the method comprising:
in the lithographic apparatus, directing a first radiation beam to be incident selectively on a spot on a mask to locally deform material constituting part of, or alter a materials property within, the integral physical structure of the mask;
directing a second radiation beam onto the mask; and
projecting the second radiation beam patterned by the mask having the locally deformed material or altered property onto a substrate.

20. The method of claim 19 , wherein directing the first radiation beam comprises directing the first radiation beam onto a plurality of spots on the mask substantially simultaneously.

Assignees

• Mulkens Johannes Catharinus Hubertus
• Asml Netherlands Bv

Inventors

• Mulkens Johannes Catharinus Hubertus

Classifications

• G03F7/7065

  Defects, e.g. optical inspection of patterned layer for defects · CPC title

• G03F7/70283

  Mask effects on the imaging process · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title