IGBT with a built-in-diode

Patent metadata

Field	Value
Publication number	US-9412737-B2
Application number	US-201314888291-A
Country	US
Kind code	B2
Filing date	May 23, 2013
Priority date	May 23, 2013
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

When an IGBT has a barrier layer 10 that separates an upper body region 8 a from a lower body region 8 b , conductivity modulation is enhanced and on-resistance decreases. When the IGBT also has a Schottky contact region 6 that extends to reach the barrier layer 10 , a diode structure can be obtained. In this case, however, a saturation current increases as well as short circuit resistance decreases. The Schottky contact region 6 is separated from the emitter region 4 by the upper body region 8 a . By selecting an impurity concentration in the region 8 a , an increase in a saturation current can be avoided. Alternatively, a block structure that prevents a depletion layer extending from the region 6 into the region 8 a from joining a depletion layer extending from the region 4 into the region 8 a may be provided in an area separating the region 6 from the region 4.

First claim

The invention claimed is:

1. An IGBT with a built-in diode, having an emitter region, an upper body region, a barrier layer, a lower body region, a drift region, and a collector region disposed in a semiconductor substrate in this order, and comprising an IGBT structure and a Schottky diode structure, wherein
in the IGBT structure:
a trench extending from a front surface of the semiconductor substrate through the emitter region, the upper body region, the barrier layer, and the lower body region to reach the drift region is provided,
a wall surface of the trench is covered with an insulating film,
a gate electrode is disposed within the trench including the wall surface covered with the insulating film,
an emitter electrode configured to electrically connect with the emitter region is provided on the front surface of the semiconductor substrate, and
a collector electrode configured to electrically connect with the collector region is provided on a back surface of the semiconductor substrate,

in the Schottky diode structure, a Schottky contact region extending through the upper body region to reach the barrier layer, and being in a Schottky contact with the emitter electrode is provided,
the Schottky contact region and the emitter region are separated by the upper body region at a separating portion on the front surface of the semiconductor substrate, and
an impurity concentration in the separating portion is set to a concentration which satisfies a following relationship: “a distance of a depletion layer extending in the separating portion<a separated distance between the Schottky contact region and the emitter region”.

2. An IGBT with a built-in diode according to claim 1 , further having a high-concentration region in an area on a front surface side in the upper body region and that separates the Schottky contact region from the emitter region, wherein
an impurity concentration of the high-concentration region is higher than an impurity concentration of the upper body region with a same conductivity type as a conductivity type of the high-concentration region.

3. An IGBT with a built-in diode according to claim 2 , wherein
the high-concentration region surrounds the Schottky contact region in a plan view of the semiconductor substrate.

4. An IGBT with a built-in diode, having an emitter region, an upper body region, a barrier layer, a lower body region, a drift region, and a collector region disposed in a semiconductor substrate in this order, and comprising an IGBT structure and a Schottky diode structure, wherein
in the IGBT structure:
a trench extending from a front surface of the semiconductor substrate through the emitter region, the upper body region, the barrier layer, and the lower body region to reach the drift region is provided,
a wall surface of the trench is covered with an insulating film,
a gate electrode is disposed within the trench including the wall surface covered with the insulating film,
an emitter electrode configured to electrically connect with the emitter region is provided on the front surface of the semiconductor substrate, and
a collector electrode configured to electrically connect with the collector region is provided on a back surface of the semiconductor substrate,

in the Schottky diode structure, a Schottky contact region extending through the upper body region to reach the barrier layer, and being in a Schottky contact with the emitter electrode is provided,
the Schottky contact region and the emitter region are separated by the upper body region at a separating portion on the front surface of the semiconductor substrate, and
the separating portion includes a block region which blocks between a depletion layer extending from the Schottky contact region into the separating portion and a depletion layer extending from the emitter region into the separating portion.

5. An IGBT with a built-in diode according to claim 4 , wherein
the block region is an insulating region in a front surface of the upper body region that is located between the Schottky contact region and the emitter region, extending in a depth direction from the front surface of the upper body region.

Assignees

• Saito Jun
• Machida Satoru
• Yamashita Yusuke
• Toyota Motor Co Ltd

Inventors

• Saito Jun
• Machida Satoru
• Yamashita Yusuke

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/617

  Combinations of vertical BJTs and only diodes · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/142

  Anode regions of thyristors or collector regions of gated bipolar-mode devices · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title