Methods of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9412604-B2
Application number	US-201514692330-A
Country	US
Kind code	B2
Filing date	Apr 21, 2015
Priority date	Aug 14, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming an inner mask layer on an etching target film, the inner mask layer comprising a polymer;
forming a porous film on the etching target film, the porous film covering the inner mask layer;
supplying an acid source to an outer surface area of the inner mask layer through the porous film;
inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by applying the acid source;
forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and
etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

2. The method of claim 1 , wherein the porous film is formed to conformally cover exposed surfaces of the etching target film and the inner mask layer.

3. The method of claim 1 , wherein the inner mask layer is formed of a chemically amplified resist including a polymer having an acid-labile protecting group.

4. The method of claim 1 , wherein the acid source comprises acid, a photoacid generator (PAG), or a thermoacid generator (TAG).

5. The method of claim 1 , wherein the method comprises after forming the porous film, before supplying the acid source to the outer surface area of the inner mask layer through the porous film, forming an acid source coating layer facing side walls of the inner mask layer with the porous film interposed therebetween,
wherein supplying the acid source to the outer surface area comprises: diffusing the acid source included in the acid source coating layer into the inner mask layer.

6. The method of claim 1 , wherein after forming the porous film, before supplying the acid source to the outer surface area of the inner mask layer through the porous film, the method further comprises:
forming an acid source coating layer facing side walls of the inner mask layer with the porous film interposed therebetween; and
thermally processing the acid source coating layer.

7. The method of claim 1 , wherein after forming the porous film, before supplying the acid source to the outer surface area of the inner mask layer through the porous film, the method further comprises:
forming an acid source coating layer facing side walls of the inner mask layer with the porous film interposed therebetween; and
irradiating light onto the acid source coating layer.

8. The method of claim 1 , wherein after forming the porous film, before supplying the acid source to the outer surface area of the inner mask layer through the porous film, the method further comprises:
forming an acid source coating layer facing side walls of the inner mask layer with the porous film interposed therebetween;
irradiating light onto the acid source coating layer; and
thermally processing the acid source coating layer.

9. The method of claim 1 , wherein the method further comprises after forming the porous film, before supplying the acid source to the outer surface area of the inner mask layer through the porous film, forming an acid source coating layer facing side walls of the inner mask layer with the porous film interposed therebetween,
wherein the acid source coating layer is formed of a mixture of water, a soluble polymer, and the acid source.

10. The method of claim 1 , wherein the porous film comprises an oxide film, a nitride film, an oxynitride film, a polysilicon film, or a combination thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Koh Cha-Won
• Kim Hyun-Woo
• Kim Jong-Soo
• Park Jin
• Lee Hyung-Rae

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title