Composition for film formation, resist underlayer film, and forming method of resist underlayer film, and pattern-forming method

Patent metadata

Field	Value
Publication number	US-9412593-B2
Application number	US-201514662642-A
Country	US
Kind code	B2
Filing date	Mar 19, 2015
Priority date	Mar 20, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A composition for film formation includes a compound represented by formula (1), and a solvent. R 1 represents a monovalent group including an aromatic ring. n is an integer of 3 to 6. At least one monovalent group represented by R 1 further includes a group including an ethylenic double bond. a plurality of R 1 s are identical or different. A part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.

First claim

What is claimed is:

1. A pattern-forming method comprising:
applying a composition directly or indirectly on a substrate to form a coating film;
baking the coating film such that a resist underlayer film is formed;
forming a resist pattern on the resist underlayer film; and
sequentially etching the resist underlayer film and the substrate using the resist pattern as a mask,
wherein the composition comprises: a compound represented by formula (1); and a solvent,

wherein in the formula (1), R 1 represents a monovalent group comprising an aromatic ring; n is an integer of 3 to 6; at least one monovalent group represented by R 1 further comprises a group comprising an ethylenic double bond; a plurality of R 1 s are identical or different; and a part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.

2. The pattern-forming method according to claim 1 , wherein
the forming of the resist pattern comprises: providing an intermediate layer directly or indirectly on the resist underlayer film; and forming the resist pattern on the intermediate layer, and
the sequentially etching comprises etching the intermediate layer.

3. The pattern-forming method according to claim 1 , wherein a molecular weight of the compound is no less than 400 and no greater than 5,000.

4. The pattern-forming method according to claim 1 , wherein R 1 in the formula (1) is represented by formula (a):

wherein in the formula (a), R A , R B and R C each independently represent a hydrogen atom, a monovalent chain hydrocarbon group having 1 to 10 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms; R D represents a single bond or a divalent aromatic hydrocarbon group having 6 to 30 carbon atoms; at least one of R A to R D comprises the aromatic ring; a part or all of hydrogen atoms on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms; and * denotes a biding site with respect to a carbon atom of the benzene ring in the formula (1).

5. The pattern-forming method according to claim 1 , wherein the compound is represented by formula (1-1) or (1-2):

wherein,
in the formulae (1-1) and (1-2), n is an integer of 3 to 6, and a part or all of hydrogen atoms on benzene ring in the formulae (1-1) and (1-2) are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms,
in the formula (1-1), R X represents a monovalent group comprising the group comprising an ethylenic double bond; R k represents a halogen atom or an alkyl group having 1 to 10 carbon atoms; and p is an integer of 0 to 2, wherein a plurality of R X s are identical or different, and a plurality of “p”s are identical or different; and m is an integer of 0 to 8, wherein in a case where R k is present in a plurality of number, a plurality of R k s are identical or different, and
in the formula (1-2), R Y represents the monovalent group comprising an aromatic ring; and R a and R b each independently represent a hydrogen atom or a monovalent chain hydrocarbon group having 1 to 10 carbon atoms, wherein a plurality of R Y s are identical or different, a plurality of R a s are identical or different, and a plurality of R b s are identical or different.

6. The pattern-forming method according to claim 1 , wherein the composition further comprises a crosslinking agent.

7. The pattern-forming method according to claim 6 , wherein an amount of the crosslinking agent with respect to 100 parts by mass of the compound is from 2 parts by mass to 50 parts by mass.

8. The pattern-forming method according to claim 1 , wherein a content of carbon atoms of the compound is no less than 50 atom %.

9. The pattern-forming method according to claim 1 , wherein the compound is represented by formula (1-a), formula (1-b), or formula (1-c):

wherein each R 1 is identical and as defined in the formula (1).

10. The pattern-forming method according to claim 1 , wherein the composition further comprises an acid generating agent.

11. The pattern-forming method according to claim 10 , wherein an amount of the acid generating agent with respect to 100 parts by mass of the compound is from 1 part by mass to 20 parts by mass.

12. The pattern-forming method according to claim 1 , wherein the composition further comprises a binder resin.

13. The pattern-forming method according to claim 12 , wherein the binder resin comprises a naphthalene skeleton.

14. The pattern-forming method according to claim 12 , wherein the binder resin comprises a carbon-carbon triple bond.

15. The pattern-forming method according to claim 12 , wherein the binder resin comprises a crosslinkable group.

16. The pattern-forming method according to claim 12 , wherein a weight average molecular weight of the binder resin is no less than 2,000 and no greater than 8,000.

17. The pattern-forming method according to claim 12 , wherein an amount of the binder resin with respect to 100 parts by mass of the compound is no less than 30 parts by mass and no greater than 400 parts by mass.

Assignees

• Jsr Corp

Inventors

• Namai Hayato
• Wakamatsu Goji

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title