Polarization-influencing optical arrangement, in particular in a microlithographic projection exposure apparatus

Patent metadata

Field	Value
Publication number	US-9411245-B2
Application number	US-201314297273-A
Country	US
Kind code	B2
Filing date	Jan 11, 2013
Priority date	Jan 12, 2012
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

The disclosure provides a polarization-influencing optical arrangement that includes a first retardation element and a second retardation element. The optical arrangement is configurable so that a polarization-influencing effect of the first retardation element corresponds to an effect of a first lambda/2 plate having a first fast axis of the birefringence and a polarization-influencing effect of the second retardation element corresponds to an effect of a second lambda/2 plate having a second fast axis of the birefringence. An angle between the first fast axis and the second fast axis is 45°±5°.

First claim

The invention claimed is:

1. An optical arrangement, comprising:
a first retardation element comprising a first partial element comprising an optically positively uniaxial crystal material, and a second partial element comprising an optically negatively uniaxial crystal material; and
a second retardation element comprising a third partial element comprising an optically positively uniaxial crystal material, and a fourth partial element comprising an optically negatively uniaxial crystal material,
wherein:
the optical arrangement is configurable so that a polarization-influencing effect of the first retardation element corresponds to an effect of a first lambda/2 plate having a first fast axis of the birefringence and a polarization-influencing effect of the second retardation element corresponds to an effect of a second lambda/2 plate having a second fast axis of the birefringence;
an angle between the first fast axis and the second fast axis is 45°±5°; and
the optical arrangement is a microlithographic optical arrangement.

2. The optical arrangement of claim 1 , wherein the first and second partial elements have mutually perpendicular optical crystal axes.

3. The optical arrangement of claim 1 , wherein the first and second partial elements directly contact each other.

4. The optical arrangement of claim 1 , wherein the first and second retardation elements directly contact each other.

5. The optical arrangement of claim 1 , wherein the optically positively uniaxial crystal material is selected from the group containing crystalline quartz and magnesium fluoride.

6. The optical arrangement of claim 1 , wherein the optically negatively uniaxial crystal material is selected from the group containing sapphire and lanthanum fluoride.

7. The optical arrangement of claim 1 , further comprising a layer between successive partial elements, the layer being configured to match refractive indices of the successive partial elements.

8. The optical arrangement of claim 1 , wherein the first retardation element comprises a grid comprising the first and second partial elements.

9. The optical arrangement of claim 1 , wherein the first and second partial elements define an arrangement comprising two wedge elements that are displaceable relative each other.

10. The optical arrangement of claim 1 , wherein the first and second partial elements comprise photoelastic modulators.

11. An apparatus, comprising:
an illumination device configured to illuminate an object in an object plane; and
a projection lens configured to image the object onto an image plane,
wherein the apparatus comprises an optical arrangement according to claim 1 , and the apparatus is a microlithographic projection exposure apparatus.

12. The apparatus of claim 11 , wherein the retardation elements are arranged directly successively along an optical axis of the apparatus.

13. The apparatus of claim 11 , wherein the optical arrangement is arranged outside a pupil plane of the apparatus.

14. The apparatus of claim 11 , wherein the optical arrangement is arranged in a pupil plane of the projection exposure apparatus, and the pupil plane follows a first pupil plane in a direction that light propagates through the apparatus during use of the apparatus.

15. An apparatus, comprising:
an optical arrangement according to claim 1 , wherein the apparatus is a wafer inspection apparatus.

16. A method of using a microlithographic projection exposure apparatus comprising an illumination device and a projection objective, the method comprising:
using the illumination device to illuminate an object in an object plane; and
using the projection objective to image the object onto an image plane,
wherein the microlithgraphic projection exposure apparatus comprises the optical arrangement of claim 1 .

17. An optical arrangement, comprising:
a plurality of retardation elements, each retardation element comprising:
a first partial element comprising an optically positively uniaxial crystal material; and
a second partial element comprising an optically negatively uniaxial crystal material,

wherein:
the first partial elements define a first grid of partial elements;
the second partial elements define a second grid of partial elements;
the second grid of partial elements is disposed behind the first grid of partial elements; and
the optical arrangement is a microlithographic optical arrangement.

18. The optical arrangement of claim 17 , wherein, in at least one of the retardation elements, the first and second partial elements have mutually perpendicular optical crystal axes.

19. The optical arrangement of claim 17 , wherein, for each first partial element, the first partial element has an at least partially different orientation of its optical crystal axis relative to the optical crystal axis of at least one other first partial element.

20. The optical arrangement of claim 17 , wherein the first grid of partial elements is a Cartesian grid.

21. The optical arrangement of claim 17 , wherein the first grid of partial elements is a non-cartesian grid.

22. The optical arrangement of claim 17 , wherein, for each second partial element, the second partial element has an at least partially different orientation of its optical crystal axis relative to the optical crystal axis of at least one other second partial element.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Saenger Ingo
• Schlesener Frank

Classifications

• G03F7/70275

  Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems · CPC title

• G02B5/3083

  Birefringent or phase retarding elements (G02B5/3008, G02B5/3016 take precedence; systems for polarisation control G02B27/286; manufacturing phase modulating patterns by lithographic processes G03F7/001) · CPC title

• G02B27/281 Primary

  used for attenuating light intensity, e.g. comprising rotatable polarising elements · CPC title

• G03F7/70966

  Birefringence · CPC title

• G03F7/70566

  Polarisation control · CPC title