Power efficient complementary amplifier and method thereof
US-2024313721-A1 · Sep 19, 2024 · US
High-frequency amplifier
US9209752B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9209752-B2 |
| Application number | US-201313784607-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2013 |
| Priority date | Mar 5, 2012 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A high-frequency amplifier includes: a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit. The high-frequency amplifier can achieve low distortion characteristics while ensuring operational stability in a wide band.
First claim
Opening claim text (preview).
What is claimed is: 1. A high-frequency amplifier, comprising: a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit,…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H03F1/223Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9209752B2 cover?
- A high-frequency amplifier includes: a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resisti…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H03F1/223. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).