Display device using semiconductor light emitting device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9406656-B2
Application number	US-201514693633-A
Country	US
Kind code	B2
Filing date	Apr 22, 2015
Priority date	Oct 29, 2014
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A display device includes a first electrode; a second electrode; and a plurality of semiconductor light emitting devices coupled to a conductive adhesive layer, and electrically connected to the first electrode and the second electrode, wherein at least one of the plurality of semiconductor light emitting devices includes: a first conductive electrode and a second conductive electrode spaced from each other; a protruding unit extending from the second conductive electrode, and protruding from a side surface of at least one of the plurality of semiconductor light emitting devices; and a protection unit configured to cover at least part of the protruding unit for protection of the protruding unit.

First claim

What is claimed is:

1. A display device, comprising:
a first electrode;
a second electrode; and
a plurality of semiconductor light emitting devices coupled to a conductive adhesive layer, and electrically connected to the first electrode and the second electrode,
wherein at least one of the plurality of semiconductor light emitting devices includes:
a first conductive electrode and a second conductive electrode spaced from each other;
a protruding unit extending from the second conductive electrode, and protruding from a side surface of at least one of the plurality of semiconductor light emitting devices; and
a protection unit configured to cover at least part of the protruding unit for protection of the protruding unit, and
wherein the protection unit is formed of a conductive material that is electrically connected to the protruding unit.

2. The display device of claim 1 , wherein the first electrode is electrically connected to the first conductive electrode, and the second electrode is electrically connected to the protection unit.

3. The display device of claim 2 , wherein the protection unit is provided with an upper surface farthest from the first conductive electrode, and the second electrode is electrically connected to the upper surface.

4. The display device of claim 1 , wherein part of the protection unit facing the protruding unit is formed to completely cover a part of the protruding unit facing the protection unit.

5. The display device of claim 1 , wherein the protection unit is formed of a material capable of absorbing laser beams so as to protect the protruding unit from the laser beams.

6. The display device of claim 5 , wherein the protection unit is formed of at least one of ZnO, SnO 2 , Al-doped ZnO (AZO), Titanium Dioxide (TiO 2 ) and Ga-doped ZnO (GZO), and materials having a band gap smaller than that of the laser beams.

7. The display device of claim 1 , wherein at least one of the plurality of semiconductor light emitting devices includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer which are laminated in order, and
wherein the protection unit extends from one surface to a side surface of the second conductive semiconductor layer.

8. The display device of claim 7 , wherein the second conductive electrode is disposed on the one surface, and the second conductive electrode extends such that at least part thereof overlaps the protection unit.

9. The display device of claim 7 , wherein an undoped semiconductor layer is formed on another surface of the second conductive semiconductor layer, and
wherein an upper surface of the protection unit, farthest from the first conductive electrode, is formed on the same plane as an upper surface of the undoped semiconductor layer farthest from the first conductive electrode.

10. The display device of claim 7 , wherein the first electrode is disposed on a wiring substrate,
wherein at least part of the plurality of semiconductor light emitting devices is coupled to the conductive adhesive layer disposed between the wiring substrate and the second electrode, and
wherein the one surface of the second conductive semiconductor layer is a surface closest to the wiring substrate.

11. The display device of claim 1 , wherein the first conductive electrode and the second conductive electrode are spaced from each other along a protruding direction of the protruding unit, and are formed to have a height difference therebetween in a direction perpendicular to the protruding direction.

12. The display device of claim 11 , wherein the plurality of semiconductor light emitting devices are implemented as flip chip type semiconductor light emitting devices.

13. The display device of claim 1 , wherein each of the plurality of semiconductor light emitting devices is configured to emit at least one of red light, green light, blue light and ultraviolet light.

14. The display device of claim 1 , further comprising a phosphor configured to convert light emitted from at least one of the plurality of semiconductor light emitting devices, into at least one of red light, green light and blue light.

15. A method of fabricating a display device, comprising:
sequentially growing a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, on a substrate;
removing at least part of the first conductive semiconductor layer and the active layer, such that at least a part of the second conductive semiconductor layer is exposed;
forming a first conductive electrode on the first conductive semiconductor layer, and forming a second conductive electrode at the exposed part of the second conductive semiconductor layer, for implementation of a flip chip type semiconductor light emitting device; and
separating the substrate and the flip chip type semiconductor light emitting device from each other using laser beams,
wherein the second conductive electrode is provided with a protruding unit protruding from a side surface of the flip chip type semiconductor light emitting device,
wherein a protection unit is formed to cover at least a part of the protruding unit, such that the protruding unit is protected from the laser beams, and
wherein in the forming of the second conductive electrode, the protection unit is formed at the exposed part of the second conductive semiconductor layer, and the second conductive electrode is formed at the protection unit.

16. The method of claim 15 , wherein the protection unit is formed of a conductive material that is electrically connected to the protruding unit.

17. A flip chip type semiconductor light emitting device, comprising:
a first conductive semiconductor layer;
a second conductive semiconductor layer; and
an active layer,
wherein a first conductive electrode is formed on one surface of the first conductive semiconductor layer, the active layer is formed between another surface of the first conductive semiconductor layer and one surface of the second conductive semiconductor layer, and a second conductive electrode is formed at the second conductive semiconductor layer,
wherein the second conductive electrode is provided with a protruding unit protruding from a side surface of the second conductive semiconductor layer, and
wherein a protection unit formed of a conductive material is formed to cover the protruding unit.

18. The flip chip type semiconductor light emitting device of claim 17 , wherein a part of the protection unit facing the protruding unit has a larger area than a part of the protruding unit facing the protection unit.

Assignees

• Lg Electronics Inc

Inventors

• Lee Eunah
• Kang Mingu

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/8314

  extending at least partially onto an outer side surface of the bodies · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/01

  Manufacture or treatment · CPC title