Three dimensional nand device with channel contacting conductive source line and method of making thereof
US-2015380418-A1 · Dec 31, 2015 · US
US9401434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9401434-B2 |
| Application number | US-201414489902-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2014 |
| Priority date | Sep 18, 2014 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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The present disclosure relates to a structure and method for forming a flash memory cell with an improved erase speed and erase current. Si dots are used for charge trapping and an ONO sandwich structure is formed over the Si dots. Erase operation includes direct tunneling as well as FN tunneling which helps increase erase speed without compensating data retention.
Opening claim text (preview).
What is claimed is: 1. A flash memory cell comprising: a semiconductor substrate; a tunnel oxide layer disposed over the semiconductor substrate; a plurality of quantum dots disposed over the tunnel oxide layer; and an ONO sandwich structure disposed over the plurality of quantum dots; wherein the ONO sandwich structure comprises: a first oxide layer disposed above the plurality of quantum dots, a nitride layer disposed above the first oxide layer, and a second oxide…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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