Three dimensional nand device with channel contacting conductive source line and method of making thereof
US-2015380418-A1 · Dec 31, 2015 · US
Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
US9219166B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9219166-B2 |
| Application number | US-201314138294-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2013 |
| Priority date | Mar 27, 2009 |
| Publication date | Dec 22, 2015 |
| Grant date | Dec 22, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C 60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C 60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile flash memory card, comprising: a random access memory array; an input/output unit to operatively connect the random access memory to receive or transmit data; and a microcontroller to control data storage or data retrieval between the input/output unit and the random access memory array, wherein at least one cell of the random access memory array comprises, a semiconductor region having a source region, a drain region, and a channel region…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9219166B2 cover?
- Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C 60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one emb…
- Who is the assignee on this patent?
- Univ Cornell, Nano C Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/683. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).