Semiconductor device structure

Patent metadata

Field	Value
Publication number	US-9401358-B1
Application number	US-201514611843-A
Country	US
Kind code	B1
Filing date	Feb 2, 2015
Priority date	Jan 8, 2015
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

A semiconductor device structure having at least one thin-film resistor structure is provided. Through the metal plug(s) or metal wirings located on different layers, a plurality of stripe segments of the thin-film resistor structure is electrically connected to ensure the thin-film resistor structure with the predetermined resistance and less averting areas in the layout design.

First claim

What is claimed is:

1. A semiconductor device structure, comprising;
a substrate, wherein the substrate has at least one active component region and a non-active component region, at least one thin film resistor structure is disposed in the non-active component region, and the at least one thin film resistor structure is spaced from the least one active component region with a specific distance,
wherein the at least one thin film resistor structure comprises a plurality of rectangular structures and each of the plurality of rectangular structures sequentially includes an oxide layer and a metal material layer located on the oxide layer, the plurality of rectangular structures includes a first strip resistor structure and a second strip resistor structure, the first and second strip resistor structures are parallel to each other and separate from each other, and the first and second strip resistor structures are electrically connected to each other through metal connection structures, and the metal connection structures are selected from at least two of the group consisting of a wiring structure, a plug and a conductor wire structure,
wherein the active component region comprises at least one elongated strip gate structure, and a long side of the thin film resistor structure is parallel to a long side of the at least one elongated strip gate structure.

2. The structure of claim 1 , wherein the plurality of rectangular structures further comprises a third strip resistor structure, the first, second and third strip resistor structures are parallel to one another and separate from one another, and the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures, and the metal connection structures are selected from at least two of the group consisting of a wiring structure, a plug and a conductor wire structure.

3. The structure of claim 2 , wherein a first end of the first strip resistor structure is electrically connected with a first end of the second strip resistor structure through the wiring structure disposed thereon, a second end of the second strip resistor structure is electrically connected with a second end of the third strip resistor structure through the wiring structure disposed thereon, and a second end of the first strip resistor structure is electrically connected with a first end of the third strip resistor structure through the wiring structure disposed thereon and the conductor wire structure disposed thereon, such that the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures.

4. The structure of claim 2 , wherein a first end of the second strip resistor structure is electrically connected with a first end of the third strip resistor structure through the wiring structure disposed thereon and the conductor wire structure disposed thereon, a second end of the second strip resistor structure is electrically connected with a second end of the first strip resistor structure through the wiring structure disposed thereon and the conductor wire structure disposed thereon, and a first end of the first strip resistor structure is electrically connected with a second end of the third strip resistor structure through the wiring structure disposed thereon and the conductor wire structure disposed thereon, such that the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures.

5. The structure of claim 2 , wherein a first end of the first strip resistor structure is electrically connected with a first end of the second strip resistor structure through the wiring structure disposed thereon, a second end of the second strip resistor structure is electrically connected with a second end of the third strip resistor structure through the wiring structure disposed thereon, and a second end of the first strip resistor structure is electrically connected with a first end of the third strip resistor structure through the wiring structure disposed thereon, the plugs and the conductor wire structure disposed thereon, such that the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures.

6. The structure of claim 2 , wherein a first end of the second strip resistor structure is electrically connected with a first end of the third strip resistor structure through the wiring structure disposed thereon, the plugs and the conductor wire structure disposed thereon, a second end of the second strip resistor structure is electrically connected with a second end of the first strip resistor structure through the wiring structure disposed thereon, the plugs and the conductor wire structure disposed thereon, and a first end of the first strip resistor structure is electrically connected with a second end of the third strip resistor structure through the wiring structure disposed thereon, the plugs and the conductor wire structure disposed thereon, such that the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures.

7. The structure of claim 1 , wherein a material of the metal connection structures includes aluminum, copper, tungsten or any combination thereof.

8. The structure of claim 7 , wherein a material of the wiring structure includes tungsten.

9. The structure of claim 7 , wherein a material of the plug or the conductor wire structure includes aluminum or copper.

10. The structure of claim 1 , wherein a material of the metal material layer includes titanium nitride (TiN), tantalum nitride (TaN), chromium silicide (CrSi) or nickel-chromium alloys (NiCr).

11. The structure of claim 10 , wherein a thickness of the metal material layer ranges from 30 Å to 60 Å.

12. A semiconductor device structure, comprising;
a substrate, wherein the substrate has at least one active component region and a non-active component region, at least one thin film resistor structure is disposed in the non-active component region, and the at least one thin film resistor structure is spaced from the least one active component region with a specific distance,
wherein the at least one thin film resistor structure comprises a plurality of rectangular structures and each of the plurality of rectangular structures sequentially includes an oxide layer and a metal material layer located on the oxide layer, the plurality of rectangular structures includes a first strip resistor structure and a second strip resistor structure, the first and second strip resistor structures are parallel to each other and separate from each other, and the first and second strip resistor structures are electrically connected to each other through metal connection structures, and the metal connection structures are selected from at least two of the group consisting of a wiring structure, a plug and a conductor wire structure,
wherein the active component region comprises at least one elongated strip gate structure, a long side of the thin film resistor structure is perpendicular to a long side of the at least one elongated gate structure.

13. The structure of claim 12 , wherein the plurality of rectangular structures further comprises a third strip resistor structure, the first, second and third strip resistor structures are parallel to one another and separate from one another, and the first, second and third strip resistor structures are electrically connected to one another through the metal connection structures, and the metal connection structures are selected from at

Assignees

• United Microelectronics Corp

Inventors

• Hung Ching-Wen
• Huang Chih-Sen
• Chen Yi-Wei

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/611

  Combinations of BJTs and one or more of diodes, resistors or capacitors · CPC title

• H10D1/47

  Resistors having no potential barriers · CPC title

• H10D84/209 Primary

  of only resistors · CPC title

• H01L27/0647

  Electricity · mapped topic