Defect control and stability of dc bias in rf plasma-based substrate processing systems using molecular reactive purge gas
US-2015354061-A1 · Dec 10, 2015 · US
US9399818B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9399818-B2 |
| Application number | US-201214131055-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 9, 2012 |
| Priority date | Jul 7, 2011 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.
Opening claim text (preview).
What is claimed is: 1. A device for continuous coating of substrates having a deposition chamber which is provided for the chemical vapour deposition and is delimited by two substrate carriers and also a base and a cover, the base having a device for guiding the substrate carriers, and the cover having a fixed connection to the substrate carriers and thus being able to be transported together with the substrate carriers through the coating device, in that the cover and the substrate carriers together with the substrate can be transported out of the deposition chamber, said fixed connection serving to steal the deposition chamber. 2. The device according to claim 1 , wherein the device has a zone in which the cover and the substrate carriers can be cleaned or removed for cleaning. 3. The device according to claim 1 , wherein at least one cover element is disposed in front of the base in the deposition chamber. 4. The device according to claim 1 , wherein the cover element is a sacrificial layer. 5. The device according to claim 4 , wherein the sacrificial layer is a carbon layer, or a powder layer made of silicon dioxide or silicon nitride. 6. The device according to claim 1 , wherein the cover element is selected from the group consisting of cloths, foils, lamellae, combs, sealing lips or O-rings and combinations hereof. 7. The device according to claim 1 , wherein the device has an etching-back zone which is disposed in front of, after or in the deposition chamber. 8. The device according to claim 6 , wherein, in the etching-back zone, at least one nozzle for an etching agent is disposed, the nozzle being directed towards at least one of the elements which delimit the deposition chamber and/or towards at least one of the cover elements which are disposed in front of the base in the deposition chamber for etching of parasitic deposits on these elements. 9. The device according to claim 1 , wherein the device for guiding the substrate carriers is at least one rail.
Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title
Apparatus specially adapted for continuous coating · CPC title
the substrate being supported substantially vertically · CPC title
characterised by the method used for supporting substrates in the reaction chamber · CPC title
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