Laser welding method, laser welding jig, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9399268-B2
Application number	US-201414528537-A
Country	US
Kind code	B2
Filing date	Oct 30, 2014
Priority date	Dec 19, 2013
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

In a laser welding method, a gap between first and second members to be welded is made at most 300 μm by pressing the second member against the first member with claws that are pressing parts of a laser welding jig, and the second member to be welded at a place between the claws is irradiated by laser light to laser-weld the first member and the second member. In a semiconductor device, the gap between the first member and the second member at the portion of laser-welding is at most 300 μm.

First claim

What is claimed is:

1. A semiconductor device comprising:
a ceramic insulated substrate;
a front surface conductor pattern fixed on a front surface of the ceramic insulated substrate;
a semiconductor chip electrically connected to the front surface conductor pattern;
a first member electrically connected to the semiconductor chip; and
a second member laser-welded to the first member at at least one portion to electrically connect thereto;
wherein a gap between the first member and the second member at the portion of laser-welding is at most 300 μm.

2. The semiconductor device according to claim 1 , wherein the first and second members are further welded at another portion, and
a distance between an outer periphery of the one portion of laser welding and an outer periphery of the another portion of laser welding is at most 2 mm.

3. The semiconductor device according to claim 1 , wherein the first member has a thickness of at least 0.5 mm and the second member has a thickness of at most 1 mm.

4. The semiconductor device according to claim 1 , wherein the first member and the second member are planar at least at the one portion of the laser welding.

5. The semiconductor device according to claim 1 , wherein each of the first and second member has an engaging part for positioning the first member and the second member, and
the portion of the laser welding is different from the engaging part.

6. The semiconductor device according to claim 1 , further comprising a sealing material for sealing the ceramic insulated substrate, the front surface conductor pattern, the semiconductor chip, and a part of the first member,
wherein the one portion of the laser welding is not sealed with the sealing material.

Assignees

• Fuji Electric Co Ltd

Inventors

• Tamai Yuta

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07336

  Soldering or alloying · CPC title