Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US9397275B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9397275-B2 |
| Application number | US-201514663439-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 19, 2015 |
| Priority date | Jul 26, 2012 |
| Publication date | Jul 19, 2016 |
| Grant date | Jul 19, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an aggregation of semiconductor devices comprising the steps: providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer, wherein the first layer is capable of being expanded to over 2 times of the original area size of the first layer. 2. The method according to claim 1 , wherein the first layer comprises an adhesive glue layer and the plurality of semiconductor devices are adhered on the adhesive glue layer. 3. The method according to claim 1 , wherein the plurality of the semiconductor devices is sequentially addressed and adhered to the first layer from column to column. 4. The method according to claim 1 , wherein the plurality of the semiconductor devices is sequentially addressed and adhered to the adhesive glue layer by a sorter. 5. The method according to claim 2 , wherein the second layer adheres to the first layer by the adhesive glue layer and covers the plurality of semiconductor devices. 6. The method according to claim 1 , wherein the shape comprises a circle or a regular polygon with a number of sides thereof being greater than 4. 7. The method according to claim 1 , wherein the plurality of semiconductor devices forms an arrangement at a center of the aggregation. 8. The method according to claim 1 , further comprising testing the plurality of semiconductor devices to get a testing result by a tester before the step of sequentially addressing and adhering a plurality of semiconductor devices to the first layer. 9. The method according to claim 8 , wherein the sorter comprises a predetermined bin structure defining a variety of bin codes, and the plurality of semiconductor devices arranged on the first layer have the same bin code. 10. The method according to claim 9 , wherein the predetermined bin structure comprises an electrical or luminous characteristic. 11. The method according to claim 1 , wherein the plurality of semiconductor devices comprises an LED chip or a photovoltaic chip. 12. The method according to claim 1 , wherein the shape has a flat side. 13. The method according to claim 1 , further comprises forming a tag on a corner of the first layer. 14. The method according to claim 1 , wherein the shape is approximately a circle. 15. The method according to claim 1 , wherein a distance between any two points of the shape is not greater than 15 cm. 16. The method according to claim 1 , wherein each of the plurality of semiconductor devices further comprises a conductive pad. 17. The method according to claim 1 , wherein the semiconductor devices are aligned to each other. 18. The method according to claim 1 , wherein a distance between adjacent two of the semiconductor devices is between 50 μm and 5 mm. 19. The method according to claim 12 , wherein the step of sequentially addressing and adhering the plurality of semiconductor devices to the first layer is started from the flat side.
used to support diced chips prior to mounting · CPC title
used to protect an active side of a device or wafer · CPC title
comprising connection or disconnection of parts of a device in response to a measurement · CPC title
Wafer tapes, e.g. grinding or dicing support tapes · CPC title
using temporarily an auxiliary support · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.