Non-volatile semiconductor memory device

Patent metadata

Field	Value
Publication number	US-9397144-B2
Application number	US-201414483954-A
Country	US
Kind code	B2
Filing date	Sep 11, 2014
Priority date	Feb 26, 2010
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

According to one embodiment, a non-volatile semiconductor memory device includes: a semiconductor substrate; a plurality of first lines; a plurality of second lines; and a plurality of non-volatile memory cells arranged at positions where the plurality of first lines intersect with the plurality of second lines, wherein each of the plurality of non-volatile memory cells includes a resistance change element and a rectifying element connected in series to the resistance change element, and a resistance change film continuously extending over the plurality of second lines is arranged between the plurality of first lines and the plurality of second lines, and the resistance change element includes a portion where the first line intersect with the second line in the resistance change film.

First claim

What is claimed is:

1. A non-volatile semiconductor memory device comprising:
a semiconductor substrate;
a plurality of first lines arranged side by side in a first plane approximately vertical to a surface of the semiconductor substrate, each of the plurality of first lines extending along the surface of the semiconductor substrate;
a plurality of second lines arranged side by side in a second plane along the first plane, each of the plurality of second lines extending approx…

Assignees

• Toshiba Kk

Inventors

• Nansei Hiroyuki

Classifications

• H01L45/04

  Electricity · mapped topic

• H01L45/147

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L27/2472

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic