Peeling apparatus and manufacturing apparatus of semiconductor device

Patent metadata

Field	Value
Publication number	US-9397126-B2
Application number	US-201514801093-A
Country	US
Kind code	B2
Filing date	Jul 16, 2015
Priority date	Sep 29, 2006
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

First claim

What is claimed is:

1. A method for manufacturing a display module, comprising:
forming a peeling layer on a substrate;
forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;
attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;
bending the film, whereby peeling the element formation layer from the substrate;
supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; and
separating the element formation layer from the substrate.

2. A method for manufacturing a display module, comprising:
forming a metal film or an alloy film on a substrate;
forming an oxide film on and in contact with the metal film or the alloy film, whereby forming a peeling layer comprising the oxide film and one of the metal film and the alloy film;
forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;
attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;
bending the film, whereby peeling the element formation layer from the substrate,
supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; and
separating the element formation layer from the substrate.

3. The method for manufacturing a display module according to claim 2 ,
wherein a surface of the metal film or of the alloy film is oxidized when the oxide film is formed.

4. The method for manufacturing a display module according to claim 2 ,
wherein the metal film of the alloy film comprises a metal selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, and iridium.

5. A method for manufacturing a display module, comprising:
forming a tungsten film on a substrate;
forming a silicon oxide film on the tungsten film, whereby forming a peeling layer comprising the silicon oxide film and the tungsten film;
forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;
attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;
bending the film, whereby peeling the element formation layer from the substrate;
supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; and
separating the element formation layer from the substrate.

6. The method for manufacturing a display module according to claim 5 ,
wherein a surface of the tungsten film is oxidized when the silicon oxide film is formed.

7. The method for manufacturing a display module according to claim 1 , further comprising forming a groove in the element formation layer,
wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove.

8. The method for manufacturing a display module according to claim 2 , further comprising forming a groove in the element formation layer,
wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove.

9. The method for manufacturing a display module according to claim 5 , further comprising forming a groove in the element formation layer,
wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove.

10. The method for manufacturing a display module according to claim 7 ,
wherein the groove is formed by laser light irradiation.

11. The method for manufacturing a display module according to claim 8 ,
wherein the groove is formed by laser light irradiation.

12. The method for manufacturing a display module according to claim 9 ,
wherein the groove is formed by laser light irradiation.

13. The method for manufacturing a display module according to claim 1 ,
wherein the roller bends the film.

14. The method for manufacturing a display module according to claim 2 ,
wherein the roller bends the film.

15. The method for manufacturing a display module according to claim 5 ,
wherein the roller bends the film.

16. The method for manufacturing a display module according to claim 1 ,
wherein peeling occurs between the element formation layer and the peeling layer.

17. The method for manufacturing a display module according to claim 2 ,
wherein peeling occurs between the element formation layer and the peeling layer.

18. The method for manufacturing a display module according to claim 5 ,
wherein peeling occurs between the element formation layer and the peeling layer.

19. The method for manufacturing a display module according to claim 1 ,
wherein the film is a supporting substrate part of the display module.

20. The method for manufacturing a display module according to claim 2 ,
wherein the film is a supporting substrate part of the display module.

21. The method for manufacturing a display module according to claim 5 ,
wherein the film is a supporting substrate part of the display module.

22. The method for manufacturing a display module according to claim 1 ,
wherein the liquid is pure water.

23. The method for manufacturing a display module according to claim 2 ,
wherein the liquid is pure water.

24. The method for manufacturing a display module according to claim 5 ,
wherein the liquid is pure water.

Assignees

• Semiconductor Energy Lab

Inventors

• Eguchi Shingo
• Monma Yohei
• Tani Atsuhiro
• Hirosue Misako
• Hashimoto Kenichi
• Hosaka Yasuharu

Classifications

• H10P72/7446

  using a peeling wheel · CPC title

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/7426

  used as a support during build up manufacturing of active devices · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title