Wafer processing method

Patent metadata

Field	Value
Publication number	US-9397000-B2
Application number	US-201514698321-A
Country	US
Kind code	B2
Filing date	Apr 28, 2015
Priority date	May 7, 2014
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A wafer has a substrate and a laminated layer formed on the substrate. The laminated layer includes low-permittivity insulating films. The laminated layer forms a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines. The processing method includes a cut groove forming step of cutting the substrate of the wafer along each division line by using a first cutting blade having a first thickness, thereby forming a cut groove having a depth smaller than the thickness of the substrate, so that a first uncut portion of the substrate is formed below the cut groove, and a dividing step of dividing the first uncut portion and the laminated layer along each division line by using a second cutting blade having a second thickness smaller than the first thickness or by etching after performing the cut groove forming step.

First claim

What is claimed is:

1. A processing method for a wafer composed of a substrate and a laminated layer formed on the substrate, the laminated layer including low-permittivity insulating films, the laminated layer forming a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines, the processing method comprising:
a protective member providing step of providing a protective member on the laminated layer of the wafer;
a holding step of holding the wafer through the protective member on holding means in the condition where the substrate of the wafer is exposed after performing the protective member providing step;
a cut groove forming step of cutting the substrate of the wafer along each division line by using a first cutting blade having a first thickness after performing the holding step, thereby forming a cut groove having a depth smaller than the thickness of the substrate, so that a first uncut portion of the substrate is formed below the cut groove, wherein the cut groove formed by the first cutting blade does not extend into the laminated layer including the low-permittivity insulating films; and
a dividing step of dividing the first uncut portion and the laminated layer along each division line by using a second cutting blade having a second thickness smaller than the first thickness or by etching after performing the cut groove forming step.

2. The processing method for a wafer according to claim 1 , further comprising:
a grinding step of grinding the substrate of the wafer to reduce the thickness of the wafer to a predetermined thickness before or after performing the dividing step.

3. The processing method for a wafer according to claim 1 , further comprising:
a grinding step of grinding the substrate of the wafer to reduce the thickness of the wafer to a predetermined thickness, wherein the grinding step is performed after performing the dividing step.

4. The processing method for a wafer according to claim 1 , further comprising:
a grinding step of grinding the substrate of the wafer to reduce the thickness of the wafer to a predetermined thickness,
wherein the cut groove formed during the cut groove forming step is formed to a first depth within the substrate, and
wherein the grinding step reduces the thickness of the substrate by an amount that is equal to or greater than the first depth.

5. The processing method for a wafer according to claim 1 , wherein the first uncut portion has a thickness of between about 150 μm and about 200 μm.

6. A processing method for a wafer composed of a substrate and a laminated layer formed on the substrate, the laminated layer including low-permittivity insulating films, the laminated layer forming a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines, the processing method comprising:
a protective member providing step of providing a protective member on the laminated layer of the wafer:
a holding step of holding the wafer through the protective member on holding means in the condition where the substrate of the wafer is exposed after performing the protective member providing step;
a cut groove forming step of cutting the substrate of the wafer along each division line by using a first cutting blade having a first thickness after performing the holding thereby forming a cut groove having a depth smaller than the thickness of the substrate, so that a first uncut portion of the substrate is formed below the cut groove; and
a dividing step of dividing the first uncut portion and the laminated layer along each division line by using a second cutting blade having a second thickness smaller than the first thickness or by etching after performing the cut groove forming step,
wherein the cut groove forming step includes a first cut groove forming step of forming a first cut groove having a first width as the cut groove;
the processing method further comprises a second cut groove forming step of cutting the first uncut portion of the substrate along each division line by using the second cutting blade after performing the first cut groove forming step and before performing the dividing step, thereby forming a second cut groove having a depth smaller than the thickness of the first uncut portion and having a second width smaller than the first width, so that a second uncut portion of the substrate is formed below the second cut, wherein the second cut groove formed by the second cutting blade does not extend into the laminated layer including the low-permittivity insulating films; and
the dividing step includes an etching step of etching the second uncut portion and the laminated layer along each division line after performing the second cut groove forming step.

7. The processing method for a wafer according to claim 6 , further comprising:
a grinding step of grinding the substrate of the wafer to reduce the thickness of the wafer to a predetermined thickness,
wherein the first cut groove formed during the cut groove forming step is formed to a first depth within the substrate, and
wherein the grinding step reduces the thickness of the substrate by an amount that is equal to or greater than the first depth.

8. The processing method for a wafer according to claim 6 , wherein:
the first uncut portion has a thickness of between about 150 μm and about 200 μm; and
the second uncut portion has a thickness of between about 50 μm and about 10 μm.

Assignees

• Disco Corp

Inventors

• Priewasser Karl Heinz

Classifications

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H01L21/78 Primary

  Electricity · mapped topic