Etching method

Patent metadata

Field	Value
Publication number	US-9396962-B2
Application number	US-201514626022-A
Country	US
Kind code	B2
Filing date	Feb 19, 2015
Priority date	Feb 24, 2014
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. Further, in the method, the process (a) and the process (b) are alternately repeated.

First claim

We claim:

1. An etching method of etching a first region formed of silicon oxide, the etching method comprising:
an exposing process of exposing a target object including the first region and a second region formed of silicon nitride to plasma of a processing gas containing a fluorocarbon gas, etching the first and second regions, and forming a deposit containing fluorocarbon on the first and second regions;
a modified region forming process of forming a modified region of the deposit on the second region by colliding active species generated from the fluorocarbon gas with the second region; and
an etching process of etching the first region with a radical of the fluorocarbon contained in the deposit by exposing the target object to plasma of a gas containing a rare gas,
wherein the exposing process of exposing the target object to the plasma of the processing gas containing the fluorocarbon gas and the etching process of etching the first region with the radical of the fluorocarbon are alternately repeated.

2. The etching method of claim 1 ,
wherein the fluorocarbon gas is not supplied in the etching process of etching the first region with the radical of the fluorocarbon.

3. The etching method of claim 1 ,
wherein the exposing process of exposing the target object to the plasma of the processing gas containing the fluorocarbon gas and the etching process of etching the first region with the radical of the fluorocarbon are performed in a capacitively coupled plasma processing apparatus including an upper electrode,
the upper electrode has an electrode plate made of silicon,
the upper electrode is connected to a power supply configured to apply a voltage for attracting positive ions to the electrode plate, and
the voltage is applied to the upper electrode in at least one of the exposing process of exposing the target object to the plasma of the processing gas containing the fluorocarbon gas and the etching process of etching the first region with the radical of the fluorocarbon.

Assignees

• Tokyo Electron Ltd

Inventors

• Kitagaito Keiji
• Katsunuma Takayuki
• Honda Masanobu

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title