Determination method, control method, determination apparatus, pattern forming system and program

Patent metadata

Field	Value
Publication number	US-9396911-B2
Application number	US-201213430905-A
Country	US
Kind code	B2
Filing date	Mar 27, 2012
Priority date	Mar 28, 2011
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

First claim

What is claimed is:

1. A determining method for determining a replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate, the determining method comprising:
measuring a shape or a critical dimension of the pattern;
calculating a deviation in at least one parameter including one or more of TCD (top critical dimension), BCD (bottom critical dimension), Height (a height of a line formed by etching or a depth of a groove of the pattern), MCD (an average of TCD and BCD) and SWA (side wall angle) from data on the measured shape or the measured critical dimension; and
determining the replacement time of the focus ring based on the calculated deviation in the at least one parameter when the deviation in the at least one parameter is greater than a predetermined critical value.

2. The determining method of claim 1 ,
wherein the shape or the critical dimension of the pattern is measured at an area of about 50 mm from a peripheral portion of the substrate toward a center of the substrate.

3. A determining method of claim 2 ,
wherein the shape or the critical dimension of the pattern is measured at an area of about 10 mm to about 30 mm from the peripheral portion of the substrate toward the center of the substrate.

4. A determining method of claim 2 ,
wherein the at least one parameter includes the SWA, and
the deviation in the SWA is greater than about 0.15 degrees.

5. A determining method of claim 2 ,
wherein the at least one parameter includes the Height, and
the deviation in the Height is greater than about 6 nm.

6. A determining method of claim 2 ,
wherein the at least one parameter includes all of the TCD, the BCD, the Height, the MCD and the SWA, and
the replacement time of the focus ring is determined based on calculated deviations in all of the TCD, the BCD, the Height, the MCD and the SWA.

Assignees

• Tanaka Keisuke
• Sawai Kazuo
• Nagahata Hiroshi
• Tokyo Electron Ltd

Inventors

• Tanaka Keisuke
• Sawai Kazuo
• Nagahata Hiroshi

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01J37/3299

  Feedback systems · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/3288 Primary

  Maintenance · CPC title

• H01J2237/334

  Etching · CPC title