Methods for annealing block copolymers and articles manufactured therefrom

Patent metadata

Field	Value
Publication number	US-9394411-B2
Application number	US-201414580300-A
Country	US
Kind code	B2
Filing date	Dec 23, 2014
Priority date	Dec 31, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

First claim

What is claimed is:

1. A block copolymer comprising:
a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring;
a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C.

2. The block copolymer of claim 1 , where the vinyl aromatic monomer is an alkylstyrene.

3. The block copolymer of claim 2 , where the alkylstyrene is o-methylstyrene, p-methylstyrene, m-methylstyrene, o-ethylstyrene, m-ethylstyrene, p-ethylstyrene, α-methyl-p-methylstyrene, 2,4-dimethylstyrene, iso-propyl styrene, propyl styrene, butyl styrene, tert-butylstyrene, sec-butylstyrene, isobutylstyrene, 4-tert-butylstyrene, or a combination comprising at least one of the foregoing alkylstyrenes.

4. The block copolymer of claim 1 , where the first block comprises poly(4-tertbutyl styrene) and has a molecular weight of 2,000 to 200,000 grams per mole.

5. The block copolymer of claim 1 , where the siloxane monomer has a structure represented by formula (1)

wherein each R is independently a C 1 -C 10 alkyl, a C 3 -C 10 cycloalkyl, a C 6 -C 14 aryl, a C 7 -C 13 alkylaryl or a C 7 -C 13 arylalkyl and where a degree of polymerization n in the formula (1) is to 5,000.

6. The block copolymer of claim 1 , where the second block comprises polydimethylsiloxane.

7. The block copolymer of claim 1 , where the block copolymer comprises cylindrical and/or lamellar domains and has an interdomain spacing of less than or equal to about 50 nanometers.

8. The block copolymer of claim 1 , where the block copolymer is annealed to a temperature of up to 400° C. for up to 4 hours.

9. The block copolymer of claim 1 , where the block copolymer is annealed to a temperature of 270 to 330° C. for 0.5 minutes to 2 hours.

10. An article formed from the block copolymer of claim 1 .

11. A method comprising:
polymerizing a vinyl aromatic monomer to form a first block, wherein the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; and
polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

12. The method of claim 11 , where the first block is anionically polymerized.

13. The method of claim 12 , where the second block is polymerized by condensation polymerization.

14. The method of claim 11 , further comprising disposing the block copolymer on a substrate.

15. The method of claim 11 , further comprising annealing the block copolymer on a substrate; where the annealing is conducted at a temperature of up to 400° C. for up to 4 hours.

Assignees

• Dow Global Technologies Llc
• Rohm & Haas Elect Mat

Inventors

• Chang Shih-Wei
• Park Jong Keun
• Kramer John W
• Vogel Erin B
• Hustad Phillip D
• Trefonas Iii Peter

Classifications

• B81C1/00

  Manufacture or treatment of devices or systems in or on a substrate (B81C3/00 takes precedence) · CPC title

• B29C2059/023

  Microembossing · CPC title

• C08G77/442 Primary

  containing vinyl polymer sequences · CPC title

• B29C71/02

  Thermal after-treatment {(B29C71/0063 and B29C71/0072 take precedence)} · CPC title

• B29C59/14

  by plasma treatment {(plasma tubes per se H01J)} · CPC title