Superposition measuring apparatus, superposition measuring method, and superposition measuring system

Patent metadata

Field	Value
Publication number	US-9390885-B2
Application number	US-201414888792-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	May 9, 2013
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

When a scanning electron microscope is used to measure a superposition error between upper-layer and lower-layer patterns, an SN of the lower-layer pattern may often be lower, so that when simple frame adding processing is used, the adding processing needs to be performed many times. Further, in an image obtained through such simple adding processing, contrast may not be optimal for both the upper-layer and lower-layer patterns. In a superposition measuring apparatus and superposition measuring method that measure a difference between a position of an upper-layer pattern and a position of a lower-layer pattern by using an image obtained by irradiation of a charged particle ray, portions of images having contrasts optimized for the respective upper-layer and lower-layer patterns are added to generate a first added image optimized for the upper-layer pattern and a second added image optimized for the lower-layer pattern, and the difference between the position of the upper-layer pattern identified by using the first added image and position of the lower-layer pattern identified by using the second added image is calculated.

First claim

The invention claimed is:

1. A superposition measuring apparatus that measures a difference between a position of an upper-layer pattern of a sample and a position of a lower-layer pattern thereof by using an image obtained by irradiation of a charged particle ray, the superposition measuring apparatus comprising:
a pattern matching processing section that identifies a plurality of first portions each having a predetermined pattern from among images each in which contrast is optimized for the upper-layer pattern and identifies a plurality of second portions each having a predetermined pattern from among images each in which contrast is optimized for the lower-layer pattern;
adding processing section that cuts out the first portions and second portions as first partial images and second partial images, respectively, and adds the plurality of first partial images and plurality of second partial images to generate a first added image and a second added image; and
a misalignment calculation section that calculates a difference between the position of the upper-layer pattern identified by using the first added image and position of the lower-layer pattern identified by using the second added image.

2. The superposition measuring apparatus according to claim 1 , wherein the misalignment calculation section identifies the position of the lower-layer pattern from an image obtained by removing, using information of the position of the upper-layer pattern identified by using the first added image, the upper-layer pattern from the second added image.

3. The superposition measuring apparatus according to claim 1 , comprising a brightness conversion section that applies two different gray-level conversions to one image of the sample to generate the image in which contrast is optimized for the upper-layer pattern and image in which contrast is optimized for the lower-layer pattern.

4. The superposition measuring apparatus according to claim 1 , comprising a plurality of detectors that detect signal electrons from the sample, wherein an image formed by a signal obtained from the first detector is used as the image in which contrast is optimized for the upper layer, and an image formed by a signal obtained from the second detector is used as the image in which contrast is optimized for the lower layer.

5. The superposition measuring apparatus according to claim 1 , comprising a storage section that stores a first template image optimized for the upper-layer pattern and a second template image optimized for the lower-layer pattern, wherein a size of a field of view of each of the first and second partial images is larger than a size of a field of view of the first template image.

6. The superposition measuring apparatus according to claim 5 , wherein the size of the field of view of each of the first and second partial images is larger than that of the first template image by the maximum distance among a calculated distances from each of virtual reference points arbitrarily set on the sample to a position closest to a position at which the upper and lower layers have the same pattern as that of the second template image.

7. The superposition measuring apparatus according to claim 5 , wherein the size of the field of view of each of the first and second partial images includes a range equal to or larger than at least a period in which the same pattern is repeated in both the upper and lower layers.

8. The superposition measuring apparatus according to claim 1 , comprising a storage section that stores a first template image optimized for the upper-layer pattern, wherein the pattern matching processing section identifies the first portion by using the first template image.

9. The superposition measuring apparatus according to claim 8 , wherein the pattern matching processing section uses the first template image to identify the first portion from the image in which contrast is optimized for the upper-layer pattern and identifies, as the second portion, a position in the image in which the contrast is optimized for the lower-layer pattern that corresponds to the first portion.

10. The superposition measuring apparatus according to claim 9 , wherein the storage section further stores a second template image optimized for the lower-layer pattern, and the pattern matching processing section calculates a position of the same pattern as that of the second template image from the image in which contrast is optimized for the lower-layer pattern, calculates a position of the same pattern as that of the first template image from the image in which contrast is optimized for the upper-layer pattern using the position of the same pattern as that of the second template image as a reference, and uses the calculated position of the same pattern as that of the first template image as a reference for identifying the first portion.

11. A superposition measuring method that measures a difference between a position of an upper-layer pattern and a position of a lower-layer pattern by using an image obtained by irradiation of a charged particle ray, the superposition measuring method comprising:
cutting out a plurality of first partial images each having a predetermined pattern from among images each in which contrast is optimized for the upper-layer pattern;
cutting out a plurality of second partial images each having a predetermined pattern from among images each in which contrast is optimized for the lower-layer pattern;
adding the plurality of first partial images to generate a first added image;
adding the plurality of second partial images to generate a second added image; and
calculating a difference between a position of the upper-layer pattern identified using the first added image and a position of the lower-layer pattern identified using the second added image.

12. A superposition measurement system in which a charged particle ray device that acquires an image by irradiation of a charged particle ray and a computer that measures a difference between a position of an upper-layer pattern of a sample and a position of a lower-layer pattern thereof by using the obtained image are connected over a network, the superposition measurement system comprising:
a pattern matching processing section that identifies a plurality of first portions each having a predetermined pattern from among images each in which contrast is optimized for the upper-layer pattern and identifies a plurality of second portions each having a predetermined pattern from among images each in which contrast is optimized for the lower-layer pattern;
adding processing section that cuts out the first portions and second portions as first partial images and second partial images, respectively, and adds the plurality of first partial images and plurality of second partial images to generate a first added image and a second added image; and
a misalignment calculation section that calculates a difference between the position of the upper-layer pattern identified by using the first added image and position of the lower-layer pattern identified by using the second added image.

Assignees

• Hitachi High Tech Corp

Inventors

• Yamamoto Takuma
• Goto Yasunori
• Fukunaga Fumihiko

Classifications

• H01J2237/221

  Image processing · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• H01J2237/2817

  Pattern inspection · CPC title

• G01B15/00

  Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons (characterised by the use of optical techniques G01B9/00, G01B11/00) · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title