Release layer, substrate structure, and method for manufacturing flexible electronic device

Patent metadata

Field	Value
Publication number	US-9388278-B2
Application number	US-201414264742-A
Country	US
Kind code	B2
Filing date	Apr 29, 2014
Priority date	Oct 4, 2013
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

Disclosed is a substrate structure for manufacturing a flexible electronic device, including a supporting layer, a release layer covering the supporting layer with a first area, wherein the release layer is an aromatic polyimide, and a flexible layer covering the supporting layer and the release layer with a second area. The second area is greater than the first area. The adhesion force between the flexible layer and the supporting layer is stronger than the adhesion force between the release layer and the supporting layer.

First claim

What is claimed is:

1. A substrate structure, comprising:
a supporting layer;
a release layer with a first area covering the supporting layer, wherein the release layer is a first aromatic polyimide; and
a layer with a second area covering the release layer and the supporting layer, wherein the second area is greater than the first area, and an adhesion between the layer and the supporting layer is stronger than an adhesion between the release layer and the supporting layer,
wherein the layer comprises a second aromatic polyimide and a powder mixed in the second aromatic polyimide.

2. The substrate structure as claimed in claim 1 , wherein the first or second aromatic polyimide is polymerized of diamine and dianhydride, the diamine is 4,4′-oxydianiline, 3,4′-diaminodiphenyl ether, p-phenylene diamine, 2,2′-bis(trifluoromethyl)diamino benzidine, or combinations thereof, and the dianhydride is pyromellitic dianhydride, 3,3′4,4′-biphenyltetracarboxylic dianhydride, 4,4′-(hexafluoroisopropylidene)diphthalic anhydride, or combinations thereof.

3. The substrate structure as claimed in claim 1 , wherein the supporting layer comprises glass carrier or silicon wafer.

4. The substrate as claimed in claim 1 , wherein the first aromatic polyimide and the second aromatic polyimide are different.

5. The substrate structure as claimed in claim 1 , further comprising a device formed on the layer.

6. The substrate structure as claimed in claim 1 , wherein the first aromatic polyimide and the second aromatic polyimide are the same.

7. A method of manufacturing a flexible electronic device, comprising:
providing a supporting layer;
forming a release layer with a first area to cover the supporting layer, and the release layer is a first aromatic polyimide;
forming a layer with a second area to cover the release layer and the supporting layer, wherein the second area is greater than the first area, and an adhesion between the layer and the supporting layer is stronger than an adhesion between the release layer and the supporting layer;
forming a device on the layer; and
separating the supporting layer and the release layer, and the release layer and the layer separated from the supporting layer have an area substantially similar to the second area,
wherein the layer comprises a second aromatic polyimide and a powder mixed in the second aromatic polyimide.

8. The method as claimed in claim 7 , wherein the first or second aromatic polyimide is polymerized of diamine and dianhydride, the diamine is 4,4′-oxydianiline, 3,4′-diaminodiphenyl ether, p-phenylene diamine, 2,2′-bis(triflroromethyl)diamino benzidine, or combinations thereof, and the dianhydride is pyromellitic dianhydride, 3,3′4,4′-biphenyltetracarboxylic dianhydride, 4,4′-(hexafluoroisopropylidene) diphthalic anhydride, or combinations thereof.

9. The method as claimed in claim 7 , wherein the step of forming the device on the layer is performed at a temperature between 250° C. to 450° C.

10. The method as claimed in claim 7 , wherein the step of separating the supporting layer and the release layer comprises:
cutting an edge part of the release layer overlapping the layer in a direction vertical to a surface of the supporting layer.

11. The method as claimed in claim 7 , further comprising a step of separating the layer and the release layer after the step of separating the supporting layer and the release layer.

Assignees

• Ind Tech Res Inst

Inventors

• Lin Chih-Cheng
• Leu Chyi-Ming
• Kuo Yu-Ju

Classifications

• B32B2457/14

  Semiconductor wafers · CPC title

• B32B2379/08

  Polyimides · CPC title

• C09D179/08

  Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors · CPC title

• B32B2457/00

  Electrical equipment · CPC title

• B32B37/16

  with all layers existing as coherent layers before laminating · CPC title