Differential suspended single-layer graphene nanopore sensor, and preparation method therefor and use thereof
US-2024204190-A1 · Jun 20, 2024 · US
US9388041B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9388041-B2 |
| Application number | US-201314094590-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 2, 2013 |
| Priority date | Nov 18, 2011 |
| Publication date | Jul 12, 2016 |
| Grant date | Jul 12, 2016 |
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The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.
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What is claimed is: 1. A method for fabricating a piezoelectric energy harvester comprising: placing a polysilicon layer on top of a silicon substrate; sputtering a barrier layer on top of the substrate; treating the substrate by thermal treatment; depositing a template layer using the sol-gel process; thermally treating the deposited template layer; depositing a piezoelectric layer; thermally treating the piezoelectric layer; and subjecting the deposited layers to an etching process. 2. The method of claim 1 , further comprising a poling step. 3. The method of claim 2 , wherein the poling step is carried out at 200 kV.cm −1 for 50 min at a temperature 250° C.
Electricity · mapped topic
Etch mask forming · CPC title
Wet etching · CPC title
Electricity · mapped topic
Circuits; Control arrangements or methods · CPC title
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