Battery pack
US-2024322394-A1 · Sep 26, 2024 · US
US9386699B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9386699-B2 |
| Application number | US-201113995208-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2011 |
| Priority date | Dec 22, 2010 |
| Publication date | Jul 5, 2016 |
| Grant date | Jul 5, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present invention has an aspect to provide a mounted structure of which heat-resistant fatigue characteristic is improved. A mounted structure is provided with a substrate having a substrate electrode, an electronic component having a component electrode, and a bonding part bonding the substrate electrode and the component electrode, wherein the bonding part is constituted by a solder reinforcing part and a solder bonding part, the solder reinforcing part is a side vicinity part of the bonding part, and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, and the solder bonding part is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %.
Opening claim text (preview).
What is claimed is: 1. A mounted structure comprising: a substrate having a substrate electrode; an electronic component having a component electrode; and a bonding part bonding the substrate electrode and the component electrode, wherein the bonding part is constituted by a solder reinforcing part and a solder bonding part; the solder reinforcing part is a side vicinity part of the bonding part, and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, and the solder bonding part is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %. 2. The mounted structure according to claim 1 , wherein the solder reinforcing part is formed by a thickness of 10 μm or more and 0.27 mm or less with reference to direction from the side surface to an inner part. 3. A manufacturing method of a mounted structure comprising: supplying a first solder material on a substrate electrode of a substrate or to a neighborhood of the substrate electrode; supplying a second solder material on the substrate electrode; disposing a component electrode of an electronic component on the second solder material to mount the electronic component on the substrate; heating the first solder material and the second solder material at a temperature of a melting point of the second solder material or more and less than a melting point of the first solder material; and cooling the first solder material and the second solder material after the heating, wherein the first solder material and the second solder material are mutually close due to the supplying of the first solder material and the second solder material, the second solder material is a Sn—Bi system solder material that does not contain In, the first solder material is a material that contains In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, In of the first solder material fuses into the second solder material which has been melted by the heating, and then, when a bonding part, which bonds between the substrate electrode and the component electrode, is formed by the cooling, i) a part included in the bonding part, into which In fuses and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, is formed on a side vicinity part of the bonding part as a solder reinforcing part, and ii) a part, which is included in the bonding part except for the solder reinforcing part and is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %, is formed as a solder bonding part. 4. The manufacturing method of a mounted structure according to claim 3 , wherein the substrate has a pair of the substrate electrodes, the electronic component has a pair of the component electrodes, the bonding parts are formed between the pair of the substrate electrodes and the pair of the component electrodes which are corresponding to the pair of the substrate electrodes, respectively, and the solder reinforcing parts are formed on whole side surfaces of the bonding parts respectively, the side surfaces facing each other. 5. The manufacturing method of a mounted structure according to claim 3 , wherein the solder reinforcing part is formed by a thickness of 10 μm or more and 0.27 mm or less with reference to direction from the side surface to an inner part. 6. The manufacturing method of a mounted structure according to claim 3 , wherein the first solder material is a Sn—Ag—Bi—In system solder material. 7. A manufacturing method of a mounted structure comprising: supplying Sn-3.5Ag-0.5Bi-6In as a first solder material on a substrate electrode of a substrate or to a neighborhood of the substrate electrode; supplying Sn-58Bi as a second solder material on the substrate electrode; disposing a component electrode of an electronic component on the second solder material to mount the electronic component on the substrate; heating the first solder material and the second solder material at a temperature of a melting point of the second solder material or more and less than a melting point of the first solder material; and cooling the first solder material and the second solder material after the heating, wherein the first solder material and the second solder material are mutually close due to the supplying of the first solder material and the second solder material, In of the first solder material fuses into the second solder material which has been melted by the heating, and then, when a bonding part, which performs bond between the substrate electrode and the component electrode, is formed by the cooling, i) a part included in the bonding part, into which In fuses and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, is formed on a side vicinity part of the bonding part as a solder reinforcing part, and ii) a part, which is included in the bonding part except for the solder reinforcing part and is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %, is formed as a solder bonding part.
Solder materials or compositions specially adapted therefor · CPC title
taking account of the properties of the materials to be soldered · CPC title
Leadless chip, e.g. chip capacitor or resistor · CPC title
Solder masks · CPC title
Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.