Nanoparticles and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9385194-B2
Application number	US-201213478961-A
Country	US
Kind code	B2
Filing date	May 23, 2012
Priority date	Oct 18, 2011
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A method of manufacturing nanoparticles including: providing a metal chalcogenide complexes (MCC) hydrazine hydrate solution; providing a first organic solution of nanoparticles with first organic ligands; forming a mixed solution by mixing the MCC hydrazine hydrate solution and the first organic solution of nanoparticles capped with the first organic ligands; and replacing the first organic ligands of the nanoparticles with ligands of the MCC hydrazine hydrate.

First claim

What is claimed is:

1. A particle comprising:
a nanoparticle comprising a semiconductor material in which each dimension is less than 100 nm; and
inorganic ligands coupled to a surface of the nanoparticle, said inorganic ligands comprising hydrazine hydrate,
wherein the inorganic ligands are a metal chalcogenide complex comprising hydrazine hydrate of Sn 2 S 6 , Sn 2 Se 6 , In 2 Se 4 , In 2 Te 3 , Ga 2 Se 3 , CuInSe 2 , Cu 7 S 4 , Hg 3 Se 4 , Sb 2 Te 3 , or ZnTe.

2. The particle of claim 1 , wherein the hydrazine hydrate comprises a monohydrate, dihydrate, trihydrate, tetrahydrate, pentahydrate, hexahydrate, or a combination thereof.

3. The particle of claim 1 , wherein the nanoparticle comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, or SnPbSTe; Si, Ge, SiC, SiGe, or a combination of two or more of them.

4. The particle of claim 1 , the nanoparticle has a core-shell structure or a core-shell-shell structure.

5. A solution of a particles comprising:
the particles of claim 1 ; and
a solvent dissolving or dispersing the particles,
wherein the solvent comprises ethanolamine, dimethyl sulfoxide, dimethylformamide, or formamide.

6. The particle of claim 1 , wherein the nanoparticle comprises CdSe/CdS/ZnS, and the inorganic ligands include Sn 2 S 6 hydrazine monohydrate.

Assignees

• Cho Kyung-Sang
• Choi Byoung-Lyong
• Kim Tae-Ho
• Samsung Electronics Co Ltd

Inventors

• Cho Kyung-Sang
• Choi Byoung-Lyong
• Kim Tae-Ho

Classifications

• H10D30/402

  Single electron transistors; Coulomb blockade transistors · CPC title

• H10D62/814

  Quantum box structures · CPC title

• H10D62/86

  being Group II-VI materials, e.g. ZnO · CPC title

• H10D62/85

  being Group III-V materials, e.g. GaAs · CPC title

• H10D62/118 Primary

  Nanostructure semiconductor bodies · CPC title