FINFET structure

Patent metadata

Field	Value
Publication number	US-9385191-B2
Application number	US-201414549523-A
Country	US
Kind code	B2
Filing date	Nov 20, 2014
Priority date	Nov 20, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.

First claim

What is claimed is:

1. A FINFET structure, comprising:
a substrate, including a first area and a second area adjacent to the first area;
a PMOS element, disposed in the first area of the substrate, and including at least one first fin structure;
a NMOS element, disposed in the second area of the substrate, and including at least one second fin structure;
a STI structure, disposed between the first fin structure and the second fin structure, wherein the STI structure has a bumped part, and the bumped part has a top surface and a side wall; and
a bump structure, disposed on the STI structure and covering only and entirely the top surface of the bumped part of the STI structure, wherein the bump structure is of a single material and the single material is a carbon-containing dielectric material.

2. The FINFET structure according to claim 1 , wherein the second fin structure has a second top layer of epitaxial SiGe.

3. The FINFET structure according to claim 1 , wherein the PMOS element further includes a first gate structure formed on the first fin structure.

4. The FINFET structure according to claim 1 , wherein the NMOS element further includes a second gate structure formed on the second fin structure.

5. The FINFET structure according to claim 1 , wherein the carbon-containing dielectric material is SiCN.

Assignees

• United Microelectronics Corp

Inventors

• Wu Yen-Liang
• Chang Chung-Fu
• Shen Wen-Jiun
• Lu Man-Ling
• Liu Chia-Jong
• Chen Yi-Wei

Classifications

• H10D84/853 Primary

  comprising FinFETs · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/0167

  Manufacturing their channels · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D30/6217

  having non-uniform gate electrodes, e.g. gate conductors having varying doping · CPC title