Thin-film electro devices based on derivatized poly (benzo-isimidazobenzophenanthroline) ladder polymers

Patent metadata

Field	Value
Publication number	US-9379328-B1
Application number	US-201615019562-A
Country	US
Kind code	B1
Filing date	Feb 9, 2016
Priority date	Nov 21, 2011
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A method for making electronic devices based on derivatized ladder polymer poly(benzo-isimidazobenzophenanthroline) (BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.

First claim

What is claimed is:

1. A transistor having thin-film material, comprising:
at least one substrate;
at least one gate metal contact;
thin film material(s) having at least one organic semiconducting material layer, wherein at least one said organic semiconducting layer is Py-BBL, at least one insulator, wherein said gate metal is associated with said insulator, at least one source electrode and at least one drain electrode, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode; and
wherein said gate metal is associated with said substrate, wherein said organic semiconducting layer is associated with said source electrode, associated with said drain electrode, and associated with said insulator.

2. The transistor according to claim 1 , wherein said at least one substrate is selected from the group consisting of silcon, Ge, Quartz wafers, degenerately doped silicon wafers, glass, plastics including polyethylene, and elastomerics including polydimethylsiloxanes.

3. The transistor according to claim 1 , wherein said gate metal is selected from the group consisting of Au, Ag, Pt, Pd, and Cu.

4. The transistor according to claim 1 , wherein said gate metal is selected from the group consisting of polymers, degenerately doped silicon wafers, and graphite inks.

5. The transistor according to claim 1 , wherein said insulator is selected from the group consisting of silicon dioxide, silicon nitride, alumina oxide, hafnium oxide, and high-K dielectric materials.

6. The transistor according to claim 1 , wherein said insulator is at least one polymer and/or elastomer selected from the group consisting of epoxies, polyimides, and polydimethylsiloxanes.

7. The transistor according to claim 1 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of Au and Ag.

8. The transistor according to claim 1 , wherein said source electrode and/or drain electrode are made of Cu.

9. The transistor according to claim 1 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of graphene and carbon nanotubes.

10. A transistor having thin-film material, comprising:
at least one substrate;
at least one gate metal contact, wherein said gate metal is associated with said substrate;
thin film material(s) having at least one insulator, wherein said gate metal is associated with said insulator;
at least one drain electrode;
at least one n-source material to form at least one n-source channel;
at least one p-source material to form at least one p-source channel, wherein said n-source channel and said p-source channel are associated with said drain electrode and with said insulator, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode; and
at least one organic semiconducting layer, wherein at least one said organic semiconducting layer is Py-BBL, wherein said organic semiconducting layer is associated with said n-channel source and said drain, wherein said organic semiconducting layer is associated with said p-channel source and said drain.

11. The transistor according to claim 10 , wherein said at least one substrate is selected from the group consisting of silcon, Ge, Quartz wafers, degenerately doped silicon wafers, glass, plastics including polyethylene, and elastomerics including polydimethylsiloxanes.

12. The transistor according to claim 10 , wherein said gate metal is selected from the group consisting of Au, Ag, Pt, Pd, and Cu.

13. The transistor according to claim 10 , wherein said gate metal is selected from the group consisting of polymers, degenerately doped silicon wafers, and graphite inks.

14. The transistor according to claim 10 , wherein said insulator is selected from the group consisting of silicon dioxide, silicon nitride, alumina oxide, hafnium oxide, and high-K dielectric materials.

15. The transistor according to claim 10 , wherein said insulator is at least one polymer and/or elastomer selected from the group consisting of epoxies, polyimides, and polydimethylsiloxanes.

16. The transistor according to claim 10 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of Au and Ag.

17. The transistor according to claim 10 , wherein said source electrode and/or drain electrode are made of Cu.

18. The transistor according to claim 10 , wherein said source electrode and/or drain electrode are made of materials selected from the group consisting of graphene and carbon nanotubes.

19. The transistor according to claim 10 , wherein said p-channel and p-drain are made of materials selected from the group consisting of polythiophene and fullerene (C-60).

Assignees

• Us Navy

Inventors

• Baca Alfred J
• Lai William W

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H01G9/2059

  comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution · CPC title

• C08G73/20 Primary

  Pyrrones · CPC title

• H01L51/0046

  Electricity · mapped topic