Variable range photodetector and method thereof

Patent metadata

Field	Value
Publication number	US-9379271-B2
Application number	US-201414285964-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	May 24, 2013
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.

First claim

The invention claimed is:

1. A photodetector for detecting photons in a predetermined wavelength range comprising:
a substrate;
a p-type layer located above the substrate suitable for forming a p-metal contact thereon;
a first region in which absorption and multiplication of carriers occurs, the first region having a crystalline structure having a growth direction and a first total polarization having a magnitude and direction;
a second region adjacent to the first region having a second total polarization, the second region comprising a crystalline structure having a growth direction and the second total polarization having a magnitude and direction, the first and second regions forming a first interface therebetween, the magnitudes and directions of the first and second total polarizations being such that a scalar projection of the second total polarization on the growth direction is less than a scalar projection of the first total polarization projected onto the growth direction thereby creating a positive first interface charge; and
a third region suitable for forming an n-metal contact thereon, the third region having a growth direction and a third total polarization with a magnitude and direction, the second and third regions forming a second interface therebetween, the third total polarization having a scalar projection on the growth direction that is greater than the scalar projection of the second polarization onto the growth direction, creating a negative second interface charge;
the positive first and negative second interface charges separated by a thickness of the second region creating an electrostatic potential barrier to carriers of differing energy levels; the electrostatic potential barrier defining the predetermined wavelength range of the photodetector.

2. The photodetector of claim 1 wherein the electrostatic potential barrier defining the predetermined wavelength range may be changed by changing the thickness of the second region in association with the positive first and negative second interface charges.

3. The photodetector of claim 1 wherein the second region has a sufficient thickness that precludes tunneling of carriers from the third region to the first region.

4. The photodetector of claim 1 wherein the third region has an n-metal contact associated therewith, the p-layer has the p-metal contact associated therewith, and further comprising a first terminal associated with the p-metal contact and a second terminal being associated with the n-metal contact, the first and second terminals adapted to be connected to a voltage source, and wherein the electrostatic potential barrier may be adjusted by adjusting a voltage level of the voltage source.

5. The photodetector of claim 1 wherein the electrostatic potential barrier can be raised by adding donors near the first interface which are ionized to increase a net positive charge near the first interface or adding acceptors near the second interface which are ionized to increase a net negative charge near the second interface.

6. The photodetector of claim 1 wherein the electrostatic potential barrier can be lowered by adding acceptors near the first interface which are ionized to decrease a net positive charge near the first interface or adding donors near the second interface which are ionized to decrease a net negative charge near the second interface.

7. The photodetector of claim 1 wherein the electrostatic potential barrier may be adjusted by varying a material composition of the first, second and third regions, wherein the first region contains a substantially undoped or lightly doped region adjacent to the first interface, comprised of a material having a band gap small enough so as to enable a generation of carriers by photon absorption, and wherein the second and third regions are comprised of materials having a bandgap large enough to be transparent to the photons generating carriers in the first region, and wherein the third region is conducting such that the substantially undoped or lightly doped region of the first region adjacent to the first interface is substantially depleted so as to enable enhanced collection of photogenerated carriers near the first interface.

8. The photodetector of claim 1 wherein the third region comprises a region suitable for forming an n-metal contact thereon and an undoped region that is transparent to the photons.

9. The photodetector of claim 1 wherein the predetermined wavelength range is less than 260 nanometers due to suppression of the collection of photogenerated electrons between 260-380 nm, and wherein the first region comprises silicon carbide, the second region comprises one of aluminum nitride and aluminum gallium nitride and the third region comprises aluminum gallium nitride of higher gallium content than the second region.

10. The photodetector of claim 1 wherein materials forming the first, second and third regions are selected from the group consisting of gallium nitride, indium gallium nitride, aluminum gallium nitride, indium aluminum gallium nitride, indium aluminum nitride, boron aluminum nitride, boron aluminum gallium nitride, aluminum nitride, boron nitride, and indium nitride, silicon carbide, silicon, zinc oxide, magnesium oxide, magnesium zinc oxide, zinc sulfide, cadmium sulfide, cadmium zinc sulfide, magnesium zinc sulfide, cadmium telluride, cadmium zinc telluride, and other Group III-V and Group II-VI polar materials.

11. A photodetector for detecting photons in a predetermined wavelength range comprising:
a substrate;
a n-type layer located above the substrate suitable for forming a n-metal contact thereon;
a first region in which absorption and multiplication of carriers occurs, the first region having a crystalline structure having a growth direction and a first total polarization having a magnitude and direction;
a second region adjacent to the first region, the second region having a crystalline structure having a growth direction and a second total polarization having a magnitude and direction, the first and second regions forming a first interface therebetween, the magnitudes and directions of the first and second total polarizations being such that a scalar projection of the second total polarization on the growth direction is greater than a scalar projection of the first total polarization projected onto the growth direction thereby creating a negative first interface charge; and
a third region suitable for forming a p-metal contact thereon, the third region having a crystalline structure having a growth direction and a third total polarization having a magnitude and direction, the second and third regions forming a second interface therebetween, the third total polarization having a scalar projection on the growth direction that is less than the scalar projection of the second total polarization onto the growth direction, creating a positive second interface charge;
the positive first and negative second interface charges separated by a thickness of the second region creating an electrostatic potential barrier to carriers of differing energy levels; the electrostatic potential barrier defining a predetermined wavelength range of the photodetector.

12. The photodetector of claim 11 wherein the electrostatic potential barrier defining the predetermined wavelength range may be changed by changing the thickness of the second region in association with the positive first and negative second interface charges.

13. The photodetector of claim 11 wherein the second region has a sufficient thickness that precludes tunneling of carriers from the third region to the first region.

14. The

Assignees

• Us Army Res Lab
• Us Army

Inventors

• Shen Paul
• Rodak Lee Ellen
• Gallinat Chad Stephen
• Sampath Anand Venktesh
• Wraback Michael

Classifications

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/1246

  III-V nitrides, e.g. GaN · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F77/148

  Shapes of potential barriers · CPC title

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title