Method of manufacturing semiconductor device, method of processing substrate substrate processing apparatus and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-9378943-B2
Application number	US-201213345885-A
Country	US
Kind code	B2
Filing date	Jan 9, 2012
Priority date	Jan 14, 2011
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) forming a carbonitride layer including an element by repeating a first set of steps a predetermined number of times, the first set including:
supplying a gas containing the element to a substrate to form a first element-containing layer including the element;
supplying a carbon-containing gas to the substrate to form a carbon-containing layer on the first element-containing layer to form a layer including the element and carbon;
and supplying a nitrogen-containing gas to the substrate to nitride the layer including the element and carbon;
(b) forming a partially oxidized layer including the element by repeating a second set of steps a predetermined number of times, the second set including:
supplying the gas containing the element to the substrate to form a second element-containing layer including the element; and
supplying an oxygen-containing gas to the substrate to partially oxidize the second element-containing layer without saturating an oxidation reaction of the second element-containing layer by the oxygen-containing gas; and
(c) alternately repeating the steps (a) and (b) to form on the substrate an oxycarbonitride film having the carbonitride layer and the partially oxidized layer alternately stacked therein.

2. The method according to claim 1 , wherein each of the first element-containing layer and the second element-containing layer comprises at least one layer of a continuous deposition layer of the element, a discontinuous deposition layer of the element, a continuous chemisorption layer of the gas containing the element or a discontinuous chemisorption layer of the gas containing the element.

3. The method according to claim 1 , wherein the carbon-containing layer comprises a discontinuous chemisorption layer of the carbon-containing gas.

4. The method according to claim 1 , wherein the layer including the element and carbon is partially nitrided in the step (a) without saturating a nitridation reaction of the layer including the element and carbon by the nitrogen-containing gas.

5. The method according to claim 1 , wherein each of forming the first element-containing layer and forming the second element-containing layer comprises supplying the gas containing the element to the substrate under a condition where a CVD reaction occurs.

6. The method according to claim 1 , wherein the element comprises a semiconductor element or a metal element.

7. The method according to claim 1 , wherein the element comprises silicon.

8. A method of processing a substrate comprising:
(a) forming a carbonitride layer including an element by repeating a first set of steps a predetermined number of times, the first set including:
supplying a gas containing the element to a substrate to form a first element-containing layer including the element;
supplying a carbon-containing gas to the substrate to form a carbon-containing layer on the first element-containing layer to form a layer including the element and carbon; and
supplying a nitrogen-containing gas to the substrate to nitride the layer including the element and carbon;
(b) forming a partially oxidized layer including the element by repeating a second set of steps a predetermined number of times, the second set including:
supplying the gas containing the element to the substrate to form a second element-containing layer including the element; and
supplying an oxygen-containing gas to the substrate to partially oxidize the second element-containing layer without saturating an oxidation reaction of the second element-containing layer by the oxygen-containing gas; and
(c) alternately repeating the steps (a) and (b) to form on the substrate an oxycarbonitride film having the carbonitride layer and the partially oxidized layer alternately stacked therein.

9. The method according to claim 1 , wherein a thickness of the carbonitride layer differs from that of the partially oxidized layer.

10. The method according to claim 1 , wherein the carbonitride layer is several atomic layers thick and the partially oxidized layer is less than one atomic layer thick.

11. The method according to claim 1 , wherein the carbonitride layer and the partially oxidized layer alternately stacked in the oxycarbonitride film are diffused into each other when the step (a) and the step (b) are alternately repeated.

12. The method according to claim 1 , wherein a number of times where the first set is performed differs from that of the second set.

13. The method according to claim 1 , wherein the first set is repeated multiple times and the second set is performed once.

14. A method of manufacturing a semiconductor device, comprising:
(a) forming a carbonitride layer including an element by repeating a first set of steps a predetermined number of times, the first set including:
supplying a gas containing the element to a substrate to form a first element-containing layer including the element;
supplying a carbon-containing gas to the substrate to form a carbon-containing layer including a discontinuous chemisorption layer of the carbon-containing gas on the first element-containing layer to form a layer including the element and carbon; and
supplying a nitrogen-containing gas to the substrate to partially nitride the layer including the element and carbon without saturating a nitridation reaction of the layer including the element and carbon by the nitrogen-containing gas;
(b) forming a partially oxidized layer including the element by repeating a second set of steps a predetermined number of times, the second set including:
supplying the gas containing the element to the substrate to form a second element-containing layer including the element; and
supplying an oxygen-containing gas to the substrate to partially oxidize the second element-containing layer without saturating an oxidation reaction of the second element-containing layer by the oxygen-containing gas; and
(c) alternately repeating the steps (a) and (b) to form on the substrate an oxycarbonitride film having the carbonitride layer and the partially oxidized layer alternately stacked therein.

Assignees

• Hirose Yoshiro
• Takasawa Yushin
• Kamakura Tsukasa
• Nakamura Yoshinobu
• Sasajima Ryota
• Hitachi Int Electric Inc

Inventors

• Hirose Yoshiro
• Takasawa Yushin
• Kamakura Tsukasa
• Nakamura Yoshinobu
• Sasajima Ryota

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title