Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-9373760-B2
Application number	US-201314651306-A
Country	US
Kind code	B2
Filing date	Dec 11, 2013
Priority date	Dec 14, 2012
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

First claim

The invention claimed is:

1. An optoelectronic semiconductor component that emits mixed-colored radiation during operation, the optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the chip emitting primary radiation through the radiation exit surface during operation;
a conversion element provided with a curvature, the conversion element being arranged on the optoelectronic semiconductor chip and being configured for wavelength conversion of at least part of the primary radiation into secondary radiation, wherein the side surfaces are covered by the conversion element; and
a spacer element arranged between the optoelectronic semiconductor chip and the conversion element, the spacer element having a curved surface facing the conversion element, wherein the conversion element is a layer of uniform thickness applied in direct contact with the curved surface, wherein the spacer element is solely arranged on the radiation exit surface and does not cover the side surfaces.

2. The optoelectronic semiconductor component according claim 1 , wherein the curved surface of the spacer element facing the conversion element is completely covered by the conversion element.

3. The optoelectronic semiconductor component according to claim 1 , wherein the curved surface of the spacer element facing the conversion element is convexly curved.

4. The optoelectronic semiconductor component according to claim 1 , wherein the spacer element is in direct contact with the radiation exit surface.

5. The optoelectronic semiconductor component according to claim 1 , wherein the spacer element is transmissive to the primary radiation.

6. The optoelectronic semiconductor component according to claim 1 , wherein the spacer element is formed from a transparent synthetic material.

7. The optoelectronic semiconductor component according to claim 1 , further comprising an optical element arranged on the conversion element.

8. The optoelectronic semiconductor component according to claim 7 , wherein the optical element is disposed downstream of the semiconductor chip at the radiation exit surface and the side surfaces.

9. The optoelectronic semiconductor component according to claim 7 , wherein the optical element comprises a lens provided for beam shaping.

10. The optoelectronic semiconductor component according to claim 1 , wherein the optoelectronic semiconductor chip is a surface emitting thin-film semiconductor chip.

11. A method for producing an optoelectronic semiconductor component that emits mixed-colored radiation during operation, the method comprising:
providing an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the semiconductor chip emitting primary radiation through the radiation exit surface during operation;
arranging a material volume on the radiation exit surface to form a spacer element, wherein a surface tension of the material volume contributes to formation of a curved surface and wherein the spacer element is solely arranged on the radiation exit surface and does not cover the side surfaces; and
applying a conversion material to the curved surface of the spacer element to form a curved conversion element, wherein the conversion element is a layer of uniform thickness applied to the curved surface by spray coating, and wherein the side surfaces are covered by the conversion element.

12. The method according to claim 11 , wherein the conversion material is applied to the curved surface by spray coating.

13. The method according to claim 11 , further comprising molding an optical element onto the semiconductor chip provided with the conversion element and the spacer element.

14. The method according to claim 13 , wherein the conversion material is applied to the curved surface by spray coating.

15. The method according to claim 14 , wherein the conversion element comprises a layer of uniform thickness.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Baumgartner Alexander
• Richter Markus
• Gallmeier Hans-Christoph
• Albrecht Tony

Classifications

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title

• H10H20/8514

  characterised by their shape, e.g. plate or foil · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/8515 Primary

  not being in contact with the bodies · CPC title

• H01L33/507 Primary

  Electricity · mapped topic