Power module and electrical device
US-2024235414-A1 · Jul 11, 2024 · US
US9373572B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9373572-B2 |
| Application number | US-201514879622-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 9, 2015 |
| Priority date | Jul 28, 2014 |
| Publication date | Jun 21, 2016 |
| Grant date | Jun 21, 2016 |
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A packaged semiconductor device including a leadframe and a plurality of angularly shaped capacitors. The leadframe includes structures with surfaces and sidewalls. The angularly shaped capacitors are attached to surface portions of the leadframe structures. The angularly shaped capacitors have sidewalls coplanar with structure sidewalls. The angularly shaped capacitors includes a conductive material attached to the structure surface. The conductive material having pores covered by oxide and filled with conductive polymer. The angularly shaped capacitors topped by electrodes are made of a second metal.
Opening claim text (preview).
We claim: 1. A packaged semiconductor device comprising: a leadframe made of a first metal, the leadframe having structures with surfaces and sidewalls; and a plurality of angularly shaped capacitors attached to surface portions of the leadframe structures, the plurality of angularly shaped capacitors comprising: sidewalls coplanar with structure sidewalls; a conductive material attached to a structure surface, the conductive material having pores covered by oxide and filled with conductive polymer; and an electrode top made of a second metal. 2. The device of claim 1 , further comprising a plurality of elongated capacitors. 3. The device of claim 1 wherein the conductive material is a foil. 4. The device of claim 1 wherein the leadframe structures include a chip pad and a plurality of leads. 5. The device of claim 1 wherein the conductive material is selected from a group comprising aluminum, tin, doped silicon, and doped germanium. 6. The device of claim 1 wherein the first metal is selected from a group comprising copper, copper alloys, aluminum, and iron-nickel alloys. 7. The device of claim 1 wherein the second metal is selected from a group comprising silver, copper, and alloys thereof. 8. The device of claim 1 further including a semiconductor chip having bond pads, metal wires connecting the bond pads to leadframe leads, and a packaging compound encapsulating the chip, the wires, the capacitors, and portions of the leads. 9. The device of claim 2 wherein the conductive material is a foil. 10. The device of claim 2 wherein the leadframe structures include a chip pad and a plurality of leads. 11. The device of claim 2 wherein the conductive material is selected from a group comprising aluminum, tin, doped silicon, and doped germanium. 12. The device of claim 2 wherein the first metal is selected from a group comprising copper, copper alloys, aluminum, and iron-nickel alloys. 13. The device of claim 2 wherein the second metal is selected from a group comprising silver, copper, and alloys thereof. 14. The device of claim 2 further including a semiconductor chip having bond pads, metal wires connecting the bond pads to leadframe leads, and a packaging compound encapsulating the chip, the wires, the capacitors, and portions of the leads. 15. A leadframe comprising: a first metal; a plurality of structures with surface portions and sidewalls; a plurality of angularly shaped foil capacitors bonded to the surfaces a first subset of the plurality of structures; a plurality of elongated foil capacitors bonded to the surfaces of a second subset of the plurality of structures. 16. The leadframe of claim 15 wherein the structures include a chip pad and a plurality of leads. 17. The leadframe of claim 15 wherein the foil is selected from a group comprising aluminum, tin, doped silicon, and doped germanium. 18. The leadframe of claim 15 wherein the first metal is selected from a group comprising copper, copper alloys, aluminum, and iron-nickel alloys. 19. The leadframe of claim 15 wherein the second metal is selected from a group comprising silver, copper, and alloys thereof. 20. The leadframe of claim 15 , wherein the plurality of elongated foil capacitors represent spare capacitor units ready to be contacted and integrated into a circuitry assembled in a package.
Cutting or separating of wafers, substrates or parts of devices · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
characterised by their materials · CPC title
Encapsulations, e.g. protective coatings · CPC title
changes in dispositions · CPC title
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