Power semiconductor module with current sensor

Patent metadata

Field	Value
Publication number	US-9370113-B2
Application number	US-201514795348-A
Country	US
Kind code	B2
Filing date	Jul 9, 2015
Priority date	Jul 14, 2014
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A power semiconductor module includes a power electronics substrate having a first surface, a second surface opposite the first surface, a first longitudinal side, a second longitudinal side opposite the first longitudinal side, a module frame, which is arranged to enclose the power electronics substrate, at least one power terminal which is arranged at the first longitudinal side and extends through the module frame, a further terminal, which is arranged at the second longitudinal side and extends through the module frame, at least one power semiconductor component which is arranged on the first surface of the power electronics substrate and is electrically connected to at least one power terminal, and at least one current sensor which is designed to measure a current in a power terminal. The at least one current sensor is arranged on the power terminal and has a signal output connected to the further terminal.

First claim

What is claimed is:

1. A power semiconductor module, comprising:
a power electronics substrate having a first surface, a second surface opposite the first surface, a first longitudinal side and a second longitudinal side opposite the first longitudinal side;
a module frame, which is arranged in such a way that it encloses the power electronics substrate;
at least one power terminal which is arranged at the first longitudinal side and which extends at least partially through the module frame;
a further terminal, which is arranged at the second longitudinal side and which extends at least partially through the module frame;
at least one power semiconductor component which is arranged on the first surface of the power electronics substrate and is electrically connected to at least one power terminal; and
at least one current sensor which is designed to measure a current in a power terminal, wherein the at least one current sensor is arranged on the power terminal and has a signal output connected to the further terminal.

2. The power semiconductor module as claimed in claim 1 , wherein the at least one power terminal has an inner section extending within the module frame, an outer section extending outside the module frame, and a connection section extending through the module frame.

3. The power semiconductor module as claimed in claim 2 , wherein the current sensor is directly connected to the inner section of the power terminal.

4. The power semiconductor module as claimed in claim 2 , wherein the current sensor is directly connected to the outer section of the power terminal.

5. The power semiconductor module as claimed in claim 2 , wherein the current sensor is directly connected to the connection section of the power terminal.

6. The power semiconductor module as claimed in claim 2 , wherein the power terminal has a bridge, which connects the power terminal to a contact section.

7. The power semiconductor module as claimed in claim 6 , wherein the bridge at least partly extends through the module frame.

8. The power semiconductor module as claimed in claim 6 , wherein the bridge is connected to the inner section of the power terminal and extends in the interior of the module frame.

9. The power semiconductor module as claimed in claim 6 , wherein the current sensor is arranged on the bridge.

10. The power semiconductor module as claimed in claim 9 , wherein the current sensor is a magnetic current sensor designed to measure a current in the power terminal on the basis of a magnetic field generated by the current.

11. The power semiconductor module as claimed in claim 1 , wherein the current sensor is a shunt current sensor designed to measure a voltage drop across the bridge and to determine therefrom the current flowing in the power terminal.

12. The power semiconductor module as claimed in claim 9 , wherein an insulation layer is arranged between the current sensor and the power electronics substrate.

13. The power semiconductor module as claimed in claim 1 , which furthermore comprises conductor tracks configured to connect the current sensor to the further terminal.

14. The power semiconductor module as claimed in claim 13 , wherein the current sensor is connected to the conductor tracks by means of bonding wires.

15. The power semiconductor module as claimed in claim 13 , which furthermore has at least one transverse side, wherein the first longitudinal side and the second longitudinal side are connected by the at least one transverse side, and wherein conductor tracks run from the first longitudinal side to the second longitudinal side.

16. The power semiconductor module as claimed in claim 13 , wherein the conductor tracks run on the power electronics substrate from the first longitudinal side to the second longitudinal side.

17. The power semiconductor module as claimed in claim 13 , wherein the conductor tracks run within the module frame on a circuit board from the first longitudinal side to the second longitudinal side.

18. A system comprising at least two of the power semiconductor modules as claimed in claim 1 , wherein the at least two power semiconductor modules comprise a common cooling device, which runs along the second surface of the power electronics substrate and which is configured to cool the power electronics substrate and the power semiconductor components arranged thereon.

19. The system as claimed in claim 18 , wherein a metallic baseplate is arranged between the power electronics substrate and the cooling device.

20. The system as claimed in claim 18 , wherein the cooling device comprises a cooling tube configured to guide a cooling liquid in its interior.

21. The system as claimed in claim 18 , wherein the at least two power semiconductor modules comprise a second common cooling device, which runs along the first surface of the power electronics substrate.

Assignees

• Infineon Technologies Ag

Inventors

• Ausserlechner Udo
• Grassmann Andreas

Classifications

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W72/5449

  not being orthogonal to a side surface of the chip, e.g. fan-out arrangements · CPC title

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title