Sensor controlled transistor protection

Patent metadata

Field	Value
Publication number	US-9368958-B2
Application number	US-201314045611-A
Country	US
Kind code	B2
Filing date	Oct 3, 2013
Priority date	Oct 3, 2013
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A circuit for protecting a transistor is disclosed. The circuit includes a temperature sensing device coupled to the transistor and a tunable clamping circuit connected between transistor terminals, wherein the tunable clamping circuit is configured to provide an adjustable clamping voltage. A temperature controller coupled to the temperature sensing device and the tunable clamping circuit is also included. The temperature controller is configured to trigger a change in a clamping voltage of the tunable clamping circuit based on a feedback from the temperature sensing device.

First claim

What is claimed is:

1. A circuit for protecting a transistor, comprising:
a temperature sensing device coupled to the transistor, the temperature sensing device includes a sense diode that is biased with a pre-selected constant current;
a tunable clamping circuit connected between transistor terminals through a diode, wherein the tunable clamping circuit is configured to provide an adjustable clamping voltage; and
a temperature controller coupled to the temperature sensing device and the tunable clamping circuit, the temperature controller is configured to trigger a change in a clamping voltage of the tunable clamping circuit based on a feedback from the temperature sensing device.

2. The circuit of claim 1 , wherein the temperature controller includes a voltage comparator that is coupled to the sense diode.

3. The circuit of claim 2 , wherein the voltage comparator includes a first input and a second input, the first input is connected to the output of the temperature sensing circuit and the second input is connected to a reference voltage source.

4. The circuit of claim 1 , wherein the tunable clamping circuit is connected between the drain and gate terminals of the transistor.

5. The circuit of claim 1 , wherein the temperature controller comprises a proportional-integral-derivative (PID) controller to maintain the transistor temperature below a selected maximum temperature.

6. The circuit of claim 1 , wherein the tunable clamping circuit comprises an array of Zener diodes.

7. The circuit of claim 6 , wherein the temperature controller comprises a sigma-delta converter that is used to drive the array of Zener diodes in the tunable clamping circuit.

8. The circuit of claim 1 , wherein the adjustable clamping voltage is provided by one of grounded-gate-MOSFET, tunnel FET, spark gaps, avalanche diode and active voltage clamp circuits.

9. The circuit of claim 2 , wherein the tunable clamping circuit includes a driver switch coupled to a Zener diode.

10. The circuit of claim 9 , wherein an output of the temperature controller is coupled to a gate of the driver switch.

11. The circuit of claim 10 , wherein the temperature controller is configured to output one or more voltage values at inputs of the tunable clamping circuit to open and close one or more of the driver switches.

12. The circuit of claim 11 , wherein the tunable clamping circuit is configured to shunt at least one voltage clamping device when the driver switch is closed though an application of a voltage at a gate of the driver switch.

13. A tunable voltage clamping circuit, comprising:
a plurality of voltage clamping devices connected in series;
a plurality of driver switches coupled to the plurality of voltage clamping devices;
at least some of the plurality of voltage clamping devices being connected to a source and a drain of one of the driver switches;
a diode for interfacing with a transistor, wherein the plurality of switches are configured such that when a switch is closed, all switches located between the diode and the switch in a series of switches including the plurality of switches are also close.

14. The tunable voltage clamping circuit of claim 13 , wherein a minimum number of external electrical terminals is equal to a number of plurality of driver switches plus two.

15. A method of protecting a transistor, comprising:
continuously monitoring a temperature of the transistor using a sense diode coupled to the transistor, where the sense diode that is biased with a pre-selected constant current;
converting the temperature into a first voltage;
comparing the first voltage with a reference voltage; and
activating a voltage clamping device to protect the transistor when the first voltage exceeds the reference voltage.

16. The method of claim 15 , further including deactivating the voltage clamping device when the first voltage drops below the reference voltage.

17. The method of claim 15 , wherein the activating is performed via a driver switch that is connected across terminals of the voltage clamping device.

18. The method of claim 15 , wherein the monitoring is performed through a sense diode that is fabricated with the transistor on a same substrate.

Assignees

• Nxp Bv

Inventors

• Ferrara Alessandro
• Van Dijk Luc
• Steeneken Peter Gerard

Classifications

• H03K17/145

  in field-effect transistor switches · CPC title

• H03K2017/0806

  against excessive temperature · CPC title

• H02H5/044 Primary

  using a semiconductor device to sense the temperature · CPC title

• H02H5/04

  responsive to abnormal temperature {(specially adapted for electric machines H02H7/0852)} · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title