Over temperature protection circuit and semiconductor device

Patent metadata

Field	Value
Publication number	US-2018069393-A1
Application number	US-201715799539-A
Country	US
Kind code	A1
Filing date	Oct 31, 2017
Priority date	Nov 19, 2015
Publication date	Mar 8, 2018
Grant date	—

Abstract

An over temperature protection circuit includes a temperature sensor unit, a detection unit, and a filter unit. The temperature sensor unit detects a temperature and outputs a temperature detection signal. The detection unit has a first threshold for determining whether a temperature state is a normal state, and a second threshold for determining whether the temperature state is an over temperature state; and operates with respect to an internal ground. The detection unit determines the normal state or the over temperature state, based on the level of the temperature detection signal with respect to the first threshold and the second threshold; and outputs a state signal. The filter unit filters out a change of the state signal, produced in accordance with a change of the internal ground.

First claim

What is claimed is:

1 . An over temperature protection circuit comprising:
a temperature sensor unit configured to detect a temperature and output a temperature detection signal; a detection unit configured to determine, based on comparing the temperature detection signal to a first threshold and a second threshold, whether the temperature corresponds to a normal temperature state corresponding to the first threshold or an over temperature state corresponding to the second threshold and to output a state signal according to the determination, and to operate with respect to an internal ground; and a filter unit configured to filter out a change of the state signal, produced in accordance with a change of the internal ground.

2 . The over temperature protection circuit according to claim 1 , wherein
the filter unit includes a transistor, a current source, a capacitor, and an inverter; the current source and the capacitor constitute a time constant circuit; and the filter unit is configured to
turn on the transistor in accordance with a level of the state signal in the over temperature state,
flow a signal from the current source to the time constant circuit,
filter the signal with a predetermined time constant, and
cause the inverter to shape a waveform of a signal outputted from the time constant circuit, and to output a waveform-shaped signal.

3 . The over temperature protection circuit according to claim 1 , wherein
the filter unit includes a first inverter, a second inverter, a resistor, and a capacitor; the resistor and the capacitor constitute a time constant circuit; and the filter unit is configured to
cause the first inverter to receive the state signal,
cause the time constant circuit to filter a signal outputted from the first inverter, and
cause the second inverter to shape a waveform of a signal outputted from the time constant circuit, and to output a waveform-shaped signal.

4 . The over temperature protection circuit according to claim 1 , wherein
the filter unit includes a plurality of inverters serially connected with each other, and the plurality of inverters are configured to perform filtering process.

5 . The over temperature protection circuit according to claim 1 , wherein
the detection unit is configured to
determine the temperature state as the over temperature state and output the state signal having a first level when the detection level is equal to or lower than the second threshold,
determine the temperature state as the normal state and output the state signal having a second level when the detection level is equal to or higher than the first threshold,
output the state signal having the second level until the detection level reaches the second threshold, when temperature rises and the detection level is between the first threshold and the second threshold, and
output the state signal having the first level until the detection level reaches the first threshold, when temperature falls and the detection level is between the first threshold and the second threshold.

6 . The over temperature protection circuit according to claim 1 , wherein the detection unit includes:
a first logic circuit configured to receive the temperature detection signal and having a logic threshold voltage equal to the first threshold, a second logic circuit configured to receive the temperature detection signal and having a logic threshold voltage equal to the second threshold, and a flip-flop circuit configured to receive a signal outputted from the first logic circuit and a signal outputted from the second logic circuit, and to output a signal having a level that is set according to levels of the received signals.

7 . The over temperature protection circuit according to claim 1 , wherein
a driving-voltage output source and an internal ground circuit are connected to the over temperature protection circuit, the driving-voltage output source includes an oscillation circuit, and a charge pump configured to repeat charging and discharging with operation of the oscillation circuit and charge a capacitor until a voltage across the capacitor becomes a drive voltage for turning on a switching element, and the internal ground circuit includes a voltage dividing circuit configured to divide a power supply voltage to produce a predetermined voltage, and a transistor having a gate and a drain and configured to receive, at the gate, the predetermined voltage, produce a voltage by adding the predetermined voltage to a voltage between the gate and the drain, and output the produced voltage from the drain, as the internal ground, the drain being connected to the driving-voltage output source.

8 . The over temperature protection circuit according to claim 1 , wherein
a logic circuit and an internal ground circuit are connected to the over temperature protection circuit, the logic circuit includes CMOS components, and is configured to perform logic control, and the internal ground circuit is configured to generate the internal ground and supply the internal ground to the logic circuit and the over temperature protection circuit.

9 . The over temperature protection circuit according to claim 1 , wherein
the filter unit includes a first filter and a second filter having filtering characteristics different from each other, and the over temperature protection circuit further includes:
a monitor unit configured to monitor an amount of change of the internal ground, and
a switch unit configured to switch the state signal and output the state signal to the first filter or the second filter, based on a monitor result.

10 . A semiconductor device comprising:
a switching element configured to drive a load; a driving-voltage output source including an oscillation circuit, and a charge pump configured to repeat charging and discharging with operation of the oscillation circuit and charge a capacitor until a voltage across the capacitor becomes a drive voltage for turning on the switching element; an internal ground circuit including a voltage dividing circuit configured to divide a power supply voltage and produce a predetermined voltage, and a transistor having a gate and a drain and configured to receive, at the gate, the predetermined voltage, produce a voltage by adding the predetermined voltage to a voltage between the gate and the drain, and output the produced voltage from the drain, as an internal ground, the drain being connected to the driving-voltage output source; and an over temperature protection circuit including:
a temperature sensor unit configured to detect a temperature and output a temperature detection signal,
a detection unit configured to determine, based on comparing the temperature detection signal to a first threshold and a second threshold, whether the temperature corresponds to a normal temperature state corresponding to the first threshold or an over temperature state corresponding to the second threshold and to output a state signal according to the determination, and to operate with respect to the internal ground, and
a filter unit configured to filter out a change of the state signal, produced in accordance with a change of the internal ground.

11 . A semiconductor device comprising:
a logic circuit including CMOS components and configured to perform logic control; an over temperature protection circuit including:
a temperature sensor unit configured to detect a temperature and output a temperature detection signal,
a detection unit configured to determine, based on comparing the temperature detection signal to a first threshold and a second threshold, whether the temperature corresponds to a normal te

Assignees

• Fuji Electric Co Ltd

Inventors

• Iwata Hideki

Classifications

• H02P29/68

  based on the temperature of a drive component or a semiconductor component · CPC title

• H02H5/044

  using a semiconductor device to sense the temperature · CPC title

• H02P2209/07

  Trapezoidal waveform · CPC title

• H03K5/1252

  Suppression or limitation of noise or interference (specially adapted for transmission systems H04B15/00, H04L25/08) · CPC title

• H03K2017/0806

  against excessive temperature · CPC title