Transistor with stacked oxide semiconductor films

Patent metadata

Field	Value
Publication number	US-9368640-B2
Application number	US-201414217988-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Nov 28, 2009
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc.

2. The semiconductor device according to claim 1 , wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

3. The semiconductor device according to claim 1 , further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

4. The semiconductor device according to claim 1 , wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

5. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

6. A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc, and
wherein the second oxide semiconductor film comprises a crystalline region.

7. The semiconductor device according to claim 6 , wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

8. The semiconductor device according to claim 6 , further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

9. The semiconductor device according to claim 6 , wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

10. The semiconductor device according to claim 6 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

11. The semiconductor device according to claim 6 , wherein the first oxide semiconductor film comprises a crystalline region.

12. The semiconductor device according to claim 6 , wherein the crystalline region has a plate-like shape.

13. The semiconductor device according to claim 6 , wherein the crystalline region is a polycrystalline region.

14. The semiconductor device according to claim 13 , wherein the polycrystalline region comprises a plurality of single crystal in each of which a c-axis is aligned.

15. A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc, and
wherein the second oxide semiconductor film is intrinsic or substantially intrinsic.

16. The semiconductor device according to claim 15 , wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

17. The semiconductor device according to claim 15 , further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

18. The semiconductor device according to claim 15 , wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

19. The semiconductor device according to claim 15 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

20. The semiconductor device according to claim 15 , wherein the first oxide semiconductor film is intrinsic or substantially intrinsic.

21. The semiconductor device according to claim 15 , wherein a concentration of hydrogen in the stacked body is lower than or equal to 1×10 18 cm −3 .

22. The semiconductor device according to claim 15 , wherein a concentration of iron is lower than or equal to 1×10 15 cm −3 .

23. The semiconductor device according to claim 15 , wherein a concentration of nickel is lower than or equal to 1×10 15 cm −3 .

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3234

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H10P14/3226 Primary

  Oxides · CPC title