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US-2024414942-A1 · Dec 12, 2024 · US
Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate
US8946005B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946005-B2 |
| Application number | US-201113030213-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 18, 2011 |
| Priority date | Jun 14, 2007 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an array substrate, comprising: providing a base substrate including a active region, a pixel region and wiring region; forming an oxide semiconductor layer and a source metal layer on the base substrate, wherein the oxide semiconductor layer being disposed under the source metal layer; patterning the source metal layer to form a source remaining pattern in the active region and a data line in the wiring region; patterning the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946005B2 cover?
- A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and d…
- Who is the assignee on this patent?
- Lee Je-Hun, Kim Do-Hyun, Lee Eun-Guk, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).