Plasma processing apparatus, plasma processing method, and storage medium

Patent metadata

Field	Value
Publication number	US-9362090-B2
Application number	US-97356310-A
Country	US
Kind code	B2
Filing date	Dec 20, 2010
Priority date	Mar 22, 2006
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

First claim

What is claimed is:

1. A plasma processing apparatus for performing a method on a substrate having an inorganic film and an organic film formed thereon, the plasma processing apparatus comprising:
a substrate processing chamber that has therein a processing space into which the substrate is transferred and which carries out the plasma processing on the substrate in the processing space;
a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source;
a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the exposed portion comprising a silicon-based material;
wherein the second electrode is connected to a DC power source;
a switching device disposed between the second electrode and the DC power source,
and
a controller configured to control the apparatus to perform:
a first step of carrying out plasma processing on the inorganic film under a condition where a potential difference between a plasma generated in the processing space and the second electrode is set to a value of the DC power source which enables the exposed portion of the second electrode to be sputtered by the generated plasma, and
a second step of carrying out plasma processing on the organic film under a condition where the switching device cuts off electrical connection between the second electrode and the DC power source so as to electrically insulate the second electrode in a floating state and the potential difference between the generated plasma and the second electrode is set to a value which avoids the exposed portion of the second electrode from being sputtered by the generated plasma.

2. A plasma processing apparatus as claimed in claim 1 , wherein the controller is configured to ground the second electrode.

3. A plasma processing apparatus as claimed in claim 1 , wherein the controller is configured to, in the first step, apply a radio frequency electrical power of frequency not more than 27 MHz that produces a desired DC voltage to the second electrode.

4. A plasma processing apparatus as claimed in claim 1 , wherein the controller is configured to set a potential on the second electrode to be not more than 50 eV which corresponds to a threshold value at which sputtering yield of the silicon based material rises in the second step.

Assignees

• Honda Masanobu
• Matsui Yutaka
• Sato Manabu
• Tokyo Electron Ltd

Inventors

• Honda Masanobu
• Matsui Yutaka
• Sato Manabu

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title