Magnetic element

US9362038B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9362038-B2
Application numberUS-201514613852-A
CountryUS
Kind codeB2
Filing dateFeb 4, 2015
Priority dateFeb 12, 2014
Publication dateJun 7, 2016
Grant dateJun 7, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.

First claim

Opening claim text (preview).

What is claimed is: 1. A magnetic element comprising: a magnetoresistive effect film including a nonmagnetic spacer layer, a first ferromagnetic layer, and a second ferromagnetic layer, the first and second ferromagnetic layers being disposed with the nonmagnetic spacer layer interposed therebetween; a pair of electrodes disposed with the magnetoresistive effect film interposed therebetween in a stacking direction of the magnetoresistive effect film; at least two first soft magnetic layers; a magnetic field generation source using a current; and a second soft magnetic layer magnetically connected to the magnetic field generation source, wherein the second soft magnetic layer has a ring-like shape, a spacing distance between the second soft magnetic layer and the magnetoresistive effect film is larger than a spacing distance between the first soft magnetic layer and the magnetoresistive effect film, a film thickness of the second soft magnetic layer is larger than a film thickness of the first soft magnetic layer, a part of each of the at least two first soft magnetic layers overlaps a part of the second soft magnetic layer in the stacking direction, the first soft magnetic layer and the second soft magnetic layer are magnetically coupled to each other, and the magnetoresistive effect film is disposed between respective fore ends of the at least two first soft magnetic layers. 2. The magnetic element according to claim 1 , wherein the first soft magnetic layers are each in form of a flat plate, and a third soft magnetic layer is disposed between the first soft magnetic layer and the second soft magnetic layer. 3. The magnetic element according to claim 2 , wherein the second soft magnetic layer and the third soft magnetic layer are directly connected to each other. 4. The magnetic element according to claim 2 , wherein the first soft magnetic layer and the third soft magnetic layer are directly connected to each other. 5. The magnetic element according to claim 2 , wherein the first soft magnetic layer and the third soft magnetic layer are directly connected to each other, and the second soft magnetic layer and the third soft magnetic layer are directly connected to each other. 6. The magnetic element according to claim 1 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the second soft magnetic layer. 7. The magnetic element according to claim 2 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 8. The magnetic element according to claim 2 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the second soft magnetic layer. 9. The magnetic element according to claim 3 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the second soft magnetic layer. 10. The magnetic element according to claim 4 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the second soft magnetic layer. 11. The magnetic element according to claim 5 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the second soft magnetic layer. 12. The magnetic element according to claim 3 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 13. The magnetic element according to claim 4 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 14. The magnetic element according to claim 5 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 15. The magnetic element according to claim 6 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 16. The magnetic element according to claim 8 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 17. The magnetic element according to claim 9 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 18. The magnetic element according to claim 10 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer. 19. The magnetic element according to claim 11 , wherein a saturation magnetic flux density of the first soft magnetic layer is larger than a saturation magnetic flux density of the third soft magnetic layer.

Assignees

Inventors

Classifications

  • the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

  • Electricity · mapped topic

  • Composite arrangements of magnetic circuits · CPC title

  • without armatures (cores H01F3/00; coils H01F5/00 {; shaping metal by applying magnetic forces B21D26/14; electromagnets specially adapted for NMR applications G01R33/381}) · CPC title

  • details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

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What does patent US9362038B2 cover?
A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and se…
Who is the assignee on this patent?
Tdk Corp
What technology area does this patent fall under?
Primary CPC classification H01F10/3268. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).