Semiconductor device process filter and method

Patent metadata

Field	Value
Publication number	US-9360758-B2
Application number	US-201414452263-A
Country	US
Kind code	B2
Filing date	Aug 5, 2014
Priority date	Dec 6, 2013
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

In accordance with an embodiment, a method of filtering a process fluid such as a negative tone developer is provided. The negative tone developer is introduced to a filter membrane that comprises a fluorine-based polymer. The negative tone developer is then filtered through the filter membrane. By using these materials and methods, polyethylene from the filter membrane will not contaminate the photoresist during development and reduce defects that arise from polyethylene contamination.

First claim

What is claimed is:

1. A method of filtering a process fluid, the method comprising:
introducing a negative tone developer to a filter membrane, wherein the filter membrane comprises a first fluorine-based polymer;
filtering the negative tone developer through the filter membrane; and
developing a photoresist with the negative tone developer.

2. The method of claim 1 , further comprising:
storing the negative tone developer in a first process tank, wherein the first process tank comprises a second fluorine-based polymer; and
moving the negative tone developer to a process unit through a pipe, wherein the pipe comprises a third fluorine-based polymer.

3. The method of claim 2 , further comprising
using the photoresist as a mask to form fins from a substrate.

4. The method of claim 2 , further comprising wetting the filter membrane prior to the filtering the negative tone developer through the filter membrane.

5. The method of claim 4 , wherein the first fluorine-based polymer comprises polytetrafluorethylene, perfluoroalkoxy, fluorinated ethylene propylene, poly(ethene-co-tetrafluoroethene), or poly(vinylidene fluoride).

6. The method of claim 2 , wherein the filter is located within the process unit.

7. The method of claim 1 , wherein the negative tone developer does not come into contact with high-density polyethylene throughout the method.

8. A method of filtering a process fluid, the method comprising:
filtering a negative tone developer with a first filter to form a filtered negative tone developer, wherein the first filter comprises a first fluorine-based polymer;
transferring the filtered negative tone developer to a first process unit; and
developing a negative tone photoresist with the negative tone developer within the first process unit to form a developed negative tone photoresist.

9. The method of claim 8 , further comprising:
removing a portion of a substrate beneath the developed photoresist to form fins; and
forming a plurality of finFETs from the fins.

10. The method of claim 8 , further comprising storing the filtered negative tone developer in a first process tank, the first process tank comprising a second fluorine-based polymer.

11. The method of claim 10 , further comprising storing the filtered negative tone developer in a first container prior to the storing the filtered negative tone developer in the first process tank.

12. The method of claim 11 , further comprising storing the negative tone developer in a second container prior to the filtering the negative tone developer, wherein the second container comprises a second fluorine-based polymer.

13. The method of claim 12 , further comprising pre-wetting the filter before the filtering the negative tone developer.

14. The method of claim 8 , further comprising cleaning the filter prior to the filtering the negative tone developer.

15. A method of filtering a process fluid, the method comprising:
installing a filter, wherein the filter comprises a fluorine-based polymer membrane;
filtering a negative tone developer through the filter to form a filtered negative tone developer; and
dispensing the filtered negative tone developer onto an exposed photoresist to remove portions of the exposed photoresist and form a patterned photoresist.

16. The method of claim 15 , further comprising receiving the filter and pre-washing the filter prior to the installing the filter.

17. The method of claim 15 , wherein the negative tone developer is free from contact with polyethylene from the filter to the photoresist.

18. The method of claim 15 , wherein the fluorine based polymer membrane comprises polytetrafluorethylene, perfluoroalkoxy, fluorinated ethylene propylene, poly(ethene-co-tetrafluoroethene), or poly(vinylidene fluoride).

19. The method of claim 15 , further comprising rinsing the filter with a buffer liquid, wherein the buffer liquid has a surface tension lower than the negative tone developer.

20. The method of claim 15 , further comprising removing a portion of a substrate using the patterned photoresist.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Lo Kuan-Hsin
• Chang Ching-Yu

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• G03F7/30 Primary

  Imagewise removal using liquid means · CPC title

• H10D86/0227 Primary

  using structural arrangements to control crystal growth, e.g. placement of grain filters · CPC title

• H01L21/3081

  Electricity · mapped topic