Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template

Patent metadata

Field	Value
Publication number	US-9359692-B2
Application number	US-201313794522-A
Country	US
Kind code	B2
Filing date	Mar 11, 2013
Priority date	Mar 21, 2012
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.

First claim

What is claimed is:

1. A metal chloride gas generator, comprising:
a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side;
a raw material section heater and a growing section heater each of which heats an inside of the reactor;
an upstream end comprising a gas inlet; and
a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section,
wherein the gas inlet pipe comprises a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.

2. The metal chloride gas generator according to claim 1 , wherein the gas inlet pipe comprises a quartz glass and the suppressing section comprises an opaque section comprising an opaque quartz glass.

3. The metal chloride gas generator according to claim 2 , wherein a longitudinal length of the opaque section of the gas inlet pipe is not less than 10 mm and not more than 200 mm.

4. The metal chloride gas generator according to claim 3 , wherein the receiving section comprises a Ga tank and the opaque section of the gas inlet pipe is located between the upstream end and the Ga tank.

5. The metal chloride gas generator according to claim 1 , wherein the suppressing section of the gas inlet pipe comprises a convex portion provided at the gas inlet pipe.

6. The metal chloride gas generator according to claim 1 , further comprising a heat shield plate provided in the reactor for thermally shielding between the upstream end and the growing section.

7. A hydride vapor phase epitaxy growth apparatus, comprising:
the metal chloride gas generator according to claim 1 .

8. A method for fabricating a nitride semiconductor template comprising a nitride semiconductor provide on a heterogeneous substrate, the method comprising:
arranging the heterogeneous substrate at a downstream side of a reactor comprising a growing section heater for heating the heterogeneous substrate at a predetermined temperature and a gas inlet pipe at an upstream side, and
supplying a source gas containing a corrosive gas over the heterogeneous substrate through the gas inlet pipe at the upstream side, the gas inlet pipe comprising a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a heat radiant from the growing section heater or the heterogeneous substrate, to make the nitride semiconductor layer contain chlorine, iron with a concentration of less than 1×10 17 cm −3 and chromium with a concentration of less than 1×10 16 cm −3 .

Assignees

• Hitachi Cable
• Sumitomo Chemical Co

Inventors

• Konno Taichiroo
• Fujikura Hajime

Classifications

• C30B25/16

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B25/14 Primary

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title